08SEP09 Search Results

Contextual Info: 4 3 D IS T LOC AD R E V IS IO N S 0 0 P LTR D E S C R IP T IO N K1 R E V IS E D PER DATE DWN 08SEP09 E C 0- 09- 020932 A PVD KK AEG D PULL ON HOUSING TO REMOVE FROM POSTS. DO NOT CONFINE THE CONDUCTORS OR PULL ON THE CONDUCTORS DURING REMOVAL ACTION. ACCEPTS

Contextual Info: New Product VT1060C, VFT1060C, VBT1060C & VIT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

Contextual Info: New Product VT760, VFT760, VBT760 & VIT760 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AC TO-220AC • Low forward voltage drop, low power losses

82557

Abstract: SCA3000 SCA3000-D01 TN54
Contextual Info: SCA3000-D01 Data Sheet SCA3000-D01 3-AXIS LOW POWER ACCELEROMETER WITH DIGITAL SPI INTERFACE Features • 2.35 V – 3.6 V supply voltage, 1.7 V – 3.6 V digital I/O voltage • ±2 g measurement range • SPI digital interface • Selectable frequency response

6242E

Abstract: 4583 dual schmitt trigger 6242b la 4508 ic pin diagram R1100D121C AT91Bootstrap CS 5609 ARM926EJ-S ISO7816 5609 dec
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer

Contextual Info: New Product VT3060G, VFT3060G, VBT3060G & VIT3060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

Contextual Info: New Product VT2080C, VFT2080C, VBT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT2080S, VFT2080S, VBT2080S, VIT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT3080C, VFT3080C, VBT3080C, VIT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

D2PAK-6

Abstract: 18TQ 18TQ045S 40HFL40S02 IRFP460 95280
Contextual Info: 18TQ035SPbF, 18TQ040SPbF, 18TQ045SPbF Vishay High Power Products Schottky Rectifier, 18 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

16CTQ100SPBF

Abstract: 95279 16CTQ 40HFL40S02 IRFP460 16CTQ-S 16CTQ100-1PBF D2PAK
Contextual Info: 16CTQ.SPbF, 16CTQ.-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 8 A FEATURES 16CTQ.-1PbF 16CTQ.SPbF • • • • Base common cathode 2 Base common cathode 2 • • 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode

P 1184

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR P U B L IC A T IO N ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S R IG H T S RESERVED. C O R P O R A T IO N . C REF D ROW M- ± 192/4 ROW N1 2 3 -POST NO REF SEE TABLE .046 + .003 £ A C

Contextual Info: 4 3 DRAWING MADE IN THIRD ANG LE PR O JEC TIO N T H IS D R A W IN G IS U N P U B L I S H P D . C CO PYR IG HT 19 R P L P A S P D FOR P UB LIC ATIO N BY AMP IN C O R P O R A T E D . A L L IN T E R N A T IO N A L 2 D IS T LOC ,1 9 Ulvl 52 R IG H TS R E S E R V E D .

Contextual Info: New Product VT1080S, VFT1080S, VBT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

19TQ015

Abstract: 19TQ015S 40HFL40S02 IRFP460
Contextual Info: 19TQ015SPbF Vishay High Power Products Schottky Rectifier, 19 A FEATURES • • • • • Base cathode 2 • 3 Anode 1 D2PAK N/C • • • 125 °C TJ operation VR < 5 V Optimized for OR-ing applications Ultralow forward voltage drop High frequency operation

Contextual Info: New Product VT2060C, VFT2060C, VBT2060C & VIT2060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

550D

Contextual Info: 550D Vishay Sprague Solid-Electrolyte TANTALEX Capacitors for High Frequency Power Supplies FEATURES • Terminatons: Tin/lead SnPb , 100 % Tin Available (RoHS compliant) • Hermetically-sealed, axial-lead solid tantalum RoHS* capacitors COMPLIANT • Small size and long life

T2060

Abstract: T2060C 89132 VT2060C-E3/4W J-STD-002 VFT2060C VIT2060C
Contextual Info: New Product VT2060C, VFT2060C, VBT2060C & VIT2060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

T2060

Abstract: VT2060G-E3/4W J-STD-002 VIT2060G 89133 T2060G
Contextual Info: New Product VT2060G, VFT2060G, VBT2060G & VIT2060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

VBT2080C

Abstract: J-STD-002 VIT2080C vft2080c
Contextual Info: New Product VT2080C, VFT2080C, VBT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

T2080S

Abstract: Vishay 80-V TMBS VBT2080S J-STD-002 VIT2080S
Contextual Info: New Product VT2080S, VFT2080S, VBT2080S, VIT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

t3060

Abstract: J-STD-002 VIT3060C
Contextual Info: New Product VT3060C, VFT3060C, VBT3060C & VIT3060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power