MAAM28000 Search Results

Contextual Info: Wide Band GaAs MMIC Amplifier, 2.0 - 8.0 GHz Features • • • • MAAM28000 V3 Die 18 dB Typical Gain ± 0.5 dB Typical Broadband Gain Flatness Single Bias Supply: +10 V DC Decoupled RF Input and Output Description M/A-COM’s MAAM28000 is a wide band, MMIC

Contextual Info: MÙkCC41 M a n A M P com pany Wide Band GaAs MMIC Amplifier 2-8 GHz MAAM28000-A1 V 2.00 CR-3 Features • H ig h G ain: 17 dB • G ain F latn ess: ±0.S dB O R IEN TA TIO N M ARK 0.210 MIN 0.180 SQ. 5.33 \ • S ingle S u p p ly : +10 V • N o Kxternal C o m p o n e n ts R equired

Contextual Info: Wide Band GaAs MMIC Amplifier 2 -8 GHz MAAM28000-A1 CR-3 Features • 17 dB Typical Gain • ±1.0 dB Typical Broadband Gain Flatness • Single Bias Supply ORIENTATION MARK • DC Decoupled RF Input and Output 0.210 MIN 0.180 SQ. 5.33 \ • 50 Ohm Impendance

Contextual Info: A fe Wide Band GaAs MMIC Amplifier 2 -8 GHz MAAM28000 Features • 18 dB Typical G ain1 • ±0.5 dB Typical Broadband Gain Flatness • Single Bias Supply • On-Chip Bias Network • DC Decoupled RF Input and Output Electrical Specifications @ Ta = 25°C

MAAM28000

Contextual Info: MAAM28000 Wide Band GaAs MMIC Amplifier 2.0 - 8.0 GHz Features • • • • Rev. V6 Die 18 dB Typical Gain ± 0.5 dB Typical Broadband Gain Flatness Single Bias Supply: +10 V DC Decoupled RF Input and Output Description The MAAM28000 is a wide band, MMIC

Contextual Info: RoHS Compliant Wide Band GaAs MMIC Amplifier 2.0 - 8.0 GHz Features • • • • • • • MAAM28000-A1 V6 Schematic Gain: 17 dB Typical Broadband Gain Flatness: ± 0.5 dB Typical Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output

a1 mmic

Abstract: MAAM28000-A1 MAAM28000-A1G mmic A
Contextual Info: Wide Band GaAs MMIC Amplifier 2-8 GHz Features ● ● ● ● ● ● MAAM28000-A1 V 2.00 CR-3 High Gain: 17 dB Gain Flatness: ±0.5 dB Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-Lead Ceramic Package

Contextual Info: Wide Band GaAs MMIC Amplifier, 2.0 - 8.0 GHz Features • • • • MAAM28000 V4 Die 18 dB Typical Gain ± 0.5 dB Typical Broadband Gain Flatness Single Bias Supply: +10 V DC Decoupled RF Input and Output Description M/A-COM’s MAAM28000 is a wide band, MMIC

radar mmic

Contextual Info: MAAM28000 Wide Band GaAs MMIC Amplifier 2.0 - 8.0 GHz Features • • • • M/A-COM Products Rev. V5 Die 18 dB Typical Gain ± 0.5 dB Typical Broadband Gain Flatness Single Bias Supply: +10 V DC Decoupled RF Input and Output Description M/A-COM’s MAAM28000 is a wide band, MMIC

Contextual Info: Wide Band GaAs MMIC Amplifier, 2.0 - 8.0 GHz Features • • • • • • MAAM28000-A1 V5 Schematic Gain: 17 dB Typical Broadband Gain Flatness: ± 0.5 dB Typical Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-lead Ceramic Package

Contextual Info: ri/A-COM/MELEC D I V -,LOülELL 52E J> • 5b 4 2 1 f l3 □000520 û^O « M A C O Bulletin No. 5603A MAAM28000 Wide Band GaAs MMIC Amplifier 2 -8 GHz . • • . . 17 dB Typical Gain ±0.5 dB typical Broadband Gain Flatness Single Bias Supply On-Chip Bias Network

a1 mmic

Abstract: buffer amplifier 8 ghz MAAM28000-A1 MAAM28000-A1G
Contextual Info: MAAM28000-A1 Wide Band GaAs MMIC Amplifier 2.0 - 8.0 GHz Schematic Features • • • • • • • Rev. V8 Gain: 17 dB Typical Broadband Gain Flatness: ± 0.5 dB Typical Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output

Contextual Info: *n AM P eam fì&ny Wide Band GaAs MMIC Amplifier 2-8 GHz Features • • • • • • MAAM28000-A1 V 2.00 CR-3 High Gain: 17 dB Gain Flatness: ±0.5 dB Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-Lead Ceramic Package

Contextual Info: Wide Band GaAs MMIC Amplifier, 2.0 - 8.0 GHz Features • • • • • • MAAM28000-A1 V3 Schematic Gain: 17 dB Typical Broadband Gain Flatness: ± 0.5 dB Typical Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-lead Ceramic Package

Contextual Info: Wide Band GaAs MMIC Amplifier, 2.0 - 8.0 GHz Features • • • • • • MAAM28000-A1 V4 Schematic Gain: 17 dB Typical Broadband Gain Flatness: ± 0.5 dB Typical Single Supply: +10 V No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-lead Ceramic Package

71200-H1

Abstract: y-parameter x-band mmic lna X-band lna MAAM28000-A1 MAAM71200-H1 X-band low noise amplifiers mmic case styles maam 23000-A1
Contextual Info: Application Note M542 Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract Rev. V4 Package Description Manufacturer 5 lead, ceramic Kyocera 6 lead, ceramic Kyocera Leadless, 6 port, ceramic StratEdge 7 lead, ceramic Kyocera 8 lead, ceramic

maam 23000-A1

Abstract: OXLEY x-band mmic lna 71200-H1 LNA x-band mmic case styles MAAM28000-A1 MAAM71200-H1 x-band lna chip
Contextual Info: Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract A test methodology will be presented which combines the advantage of on-wafer RF probing with a TRL calibration to create a completely de-embeddable, novel “test fixture”

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

Contextual Info: m an A M P co m pa n y Wide Band GaAs MMIC Amplifier 2 - 8 GHz MAAM 28000 Features • • • • • 18 dB Typical G ain 1 ±0.5 dB Typical Broadband Gain Flatness Single Bias Supply On-Chip Bias N etw ork DC D ecoupled RF Input and O utput Electrical Specifications @ TA = +25°C

MAAM28000

Contextual Info: MÛKOY, M an A M P company Wide Band GaAs MMIC Amplifier 2 - 8 GHz MAAM 28000 V 2.00 Features • • • • • 18 dB Typical Gain1 ±0.5 dB Typical Broadband Gain Flatness Single Bias Supply On-Chip Bias Network DC Decoupled RF Input and Output Electrical Specifications @ TA = +25°C