MA717WK Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification

MA704WK

Abstract: MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA717 MA717WA MA717WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA), MA3X717E (MA717WK) Silicon epitaxial planar type Unit: mm 2 1 (0.65) • Two MA3X717 (MA717) is contained in one package • Forward voltage VF, optimum for low voltage rectification

MA3X704E

Abstract: MA3X717 MA3X717E MA717WK generator 10 Ghz
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification

MA3X704E

Abstract: MA3X717 MA3X717E MA717WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification

MA717WK TO-236

Abstract: MA3X717D MA3X717E MA717WA MA717WK
Contextual Info: Schottky Barrier Diodes SBD MA3X717D , MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 1.5 − 0.05 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V 30 mA Forward current

schottky diode low vf

Abstract: MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA704WK MA717 MA717WA
Contextual Info: Schottky Barrier Diodes SBD MA3X717D (MA717WA), MA3X717E (MA717WK) Silicon epitaxial planar type Unit: mm 2 1 (0.65) • Two MA3X717 (MA717) is contained in one package • Forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704D (MA704WA), MA3X704E (MA704WK)

Contextual Info: Schottky Barrier Diodes SBD MA3X717D, MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit: mm For switching 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 5° 0.4±0.2 2.8+0.2 –0.3 1.50+0.25 –0.05 • Two MA3X717 (MA717) is contained in one package

104 M3D

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching  Features • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification

Contextual Info: Schottky Barrier Diodes SBD MA3X717D, MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit: mm For switching 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 5° 0.4±0.2 2.8+0.2 –0.3 1.50+0.25 –0.05 • Two MA3X717 (MA717) is contained in one package

Contextual Info: MA111 Schottky Barrier Diodes SBD MA717WA, MA717WK Silicon epitaxial planer type Unit : mm +0.2 For the switching circuit 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 3 +0.1 0.4 –0.05 (Low VF type of MA704WA/WK) ● 1.45 0.95 Low forward rise voltage VF, optimum for low-voltage rectification

MA3X704D

Abstract: MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA704WK MA717 MA717WA MA717WK
Contextual Info: Schottky Barrier Diodes SBD MA3X717D, MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit: mm For switching 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 5˚ 0.4±0.2 2.8+0.2 –0.3 1.50+0.25 –0.05 • Two MA3X717 (MA717) is contained in one package

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

diode cross reference

Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference
Contextual Info: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the