MA3X704D Search Results

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK V10330
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 0.4±0.2 5˚ Th an

M2P diode

Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E
Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 1.9±0.1 2.90+0.20

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage IFM 150 mA Single Double *

MA704WK

Abstract: MA3X704A MA3X704D MA3X704E MA704A MA704WA
Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 Symbol Rating Unit VR 30 V Peak reverse voltage

schottky diode low vf

Abstract: MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA704WK MA717 MA717WA
Contextual Info: Schottky Barrier Diodes SBD MA3X717D (MA717WA), MA3X717E (MA717WK) Silicon epitaxial planar type Unit: mm 2 1 (0.65) • Two MA3X717 (MA717) is contained in one package • Forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704D (MA704WA), MA3X704E (MA704WK)

MA3X704D

Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"
Contextual Info: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Contextual Info: Schottky Barrier Diodes SBD MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 0 to 0.1 Symbol Rating

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification

1010IR

Abstract: MA3X704D MA3X717 MA3X717D MA717WA
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification

104 M3D

Abstract: MA3X717D MA3X717E DSA003719
Contextual Info: Schottky Barrier Diodes SBD MA3X717D, MA3X717E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V 30 mA Forward current (DC) Single Peak forward current Single IF Double* 150 Double*

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

MA704WK

Abstract: MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA717 MA717WA MA717WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA), MA3X717E (MA717WK) Silicon epitaxial planar type Unit: mm 2 1 (0.65) • Two MA3X717 (MA717) is contained in one package • Forward voltage VF, optimum for low voltage rectification

MA717WK TO-236

Abstract: MA3X717D MA3X717E MA717WA MA717WK
Contextual Info: Schottky Barrier Diodes SBD MA3X717D , MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 1.5 − 0.05 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V 30 mA Forward current