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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 M Di ain sc te on na tin nc ue e/ d 1.25±0.1 2.1±0.1 • Features
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MA6S121
Abstract: MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 0.7±0.1 1.25±0.1 2.1±0.1 • Features • Three isolated elements contained in one package, allowing highdensity mounting
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M2D Package
Abstract: MA6S121 MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 5˚ Rating Unit Maximum peak reverse voltage
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2002/95/ecma6z121ma6s121sc-88+1m2d package
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MA6S121
Abstract: MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 Reverse voltage Maximum peak reverse voltage
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M2D Package
Abstract: M2D marking "Switching diode" 6pin 2SK125
Contextual Info: 2SK1255 Switching Diodes MA6S121 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features 2.0±0.1 0.65 0.65 ● Small S-Mini type 6-pin package ● Three-element incorporated, enabling high-density mounting ● Flat lead type, with improved mounting efficiency and solderability
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2sk1255ma6s121100mam2d package+3m2d markingswitching diode" 6pin2sk125
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MA6S121
Abstract: MA6Z121 M2D marking
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Small S-mini type 6-pin package • Three isolated elements contained in one package, allowing highdensity mounting
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ma6z121ma6s121m2d marking |
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M2D Package
Abstract: M2D marking MA6S121
Contextual Info: Switching Diodes MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.1 ± 0.1 1.25 ± 0.1 • Features Symbol Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 5 3 4 0.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C
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Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 0.7±0.1 1.25±0.1 2.1±0.1 • Features • Three isolated elements contained in one package, allowing highdensity mounting • Flat lead type, resulting in improved mounting efficiency and
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ma6z121ma6s121 |
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MA6S121
Abstract: MA6Z121
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.1 ± 0.1 1.25 ± 0.1 • Features Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 5 3 4 0.7 ± 0.1
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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1SS309
Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
Contextual Info: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35
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1ss309ma123e138811min+11-16unf48maxdan-10dan401dan403dan601dan801dan802dan803dap401da6pc
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MA156
Abstract: 154wa MA150 S-Mini A152W MA1015 MA165 MA185
Contextual Info: • Switching Diodes Line-up Surface Mount T y p e SS-Mini Type 2 Pin (D78) SS-Mini Ä , (D2| S-Mini Type (2 Pin) (D3) S-Mini Type (3 Pin) (D 5) S-Mini Type {4 Pin) (D7) S-Mini Type (6 Pin) (DIO) MA10100 Mini Type (3 Pin) (D12) Glass H o le -th ro u g h ty p e
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ma10100ma199ma158do-34+14do-35ma174ma188ma182ma193ma126ma156154wama150s-minia152wma1015ma165ma185
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MA154WK
Abstract: MA154WA MA156 MA182 MA185
Contextual Info: • Switching Diodes Line-up Hole-through type Surface Mount Type SS Mini Type 2 Pin (078) SS Mini Type (3 Pin) (D2) S Mint Type (2 Pin) (D3) S Mini Type (3 Pin) (D5) S Mini Type (4 Pin) (D7) S Mini Type (6 Pin) (DIO) Mini Type (3 Pin) (D12) Mini Type (4 Pin)
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ma10100do-34do-35ma174+10ma182ma193ma126ma122ma123/124ma159ama154wkma154wama156ma185
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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PC802
Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
Contextual Info: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)
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1ss309ma6s121ma6s718100mhz+11ma122ma123pc802dap803dan-10dan401dan403dan601dan801dan802dan803
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D836A
Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a
Contextual Info: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483
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mn115p1204b1215pmn1221+161227b1237/a1277bmn1281mn12811mn12821d836ak1606b948ak 1833n6015d856ak753k379k749ab941a
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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mn1380mn13801mn13802mn1381+16mn13811mn13812mn1382mn13821mn13822mn1544mn1280an6512mn15814mn152452sb1163amn158413an7210an7226mn15287mn15283
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip411mip2f4mip2f3+7an12947amip2f2mip2f20msmip2f40msmip2e7dmypanasonic inverter dv 700 manualmip291
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644b
Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 174 - nï m fe aï Vpmax m* iS Æ ism tÉ WJAfc I Rmax fkñ (V I F <mA) ( ß A) V f (V) IR'JWl it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ') *s y * y -y y V r rm Vr (V) (V) (fliA) 80 80 300 300 85 85 35 35 35 Io ,If* I fm <°C) (nA) I fsm cc> (A) <°C)
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1ss309dan202ktbimp11dap202kia+15lb1105mma6s121ma6s718100mhzma122ma123644bdan-10dan401dan403dan601dan801dan802dan803dap401
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A4056
Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
Contextual Info: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type
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do-34do-35ma199ma158+16ma174ma188ma115ma114ma193ma132waa4056a4047d83 zenerma2430a4091ma207 460 00 16a4100a4160a3100wma2z200
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