MA4T64500
Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV
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4t64500ma4t64533ma4t64535ot-23+7ma4t64539ot-143ma4t645xxma4t645004558557 sot143micro x
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IC 8088
Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Contextual Info: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well
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ml4t645-s-512ml4t645ic 8088ma4t64535+6semiconductor masterthurlby power supplyma4t645micro xods-512ma4t64500
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mount chip transistor 332
Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available
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ma4t645mount chip transistor 332sot-23 transistor 548ma4t64500 |
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MA4T64500
Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels
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sot23 a4p
Abstract: transistorS 812 JANTX2N2857 7104F MA4P275S ma4cp104A ODS-1091 MA4CP101B MA4E2503L MA4CS102B
Contextual Info: SMQ High Volume Standard PIN Switching Diodes Model Num ber Case S tyle M A4P1250 M A4P1450 1072 1091 V oltage Rating Volts lR = 10 h A 50 50 M axim um C apacitance (PF) 1 = 1 MHz VR = 50 V 1.2 2.5 M inim um C a rrier Lifetim e <^s) M axim um R e sistance
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a4p1250a4p1450ma4p4001a4p4002f+16a4p4006fa4p4301fa4p4302fa4p4306f7001fa4p7002fsot23 a4ptransistors 812jantx2n28577104fma4p275sma4cp104aods-1091ma4cp101bma4e2503lma4cs102b
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MA40285
Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Contextual Info: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238
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1n51651n51661n51671n5712+161n57131n57672n28572n35702n35712n3572ma40285ma4882ma40150ma46h201masw2070g1ma46h206ma47203jantx2n2857ma4p9ma40420
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nd 16 TRANSISTOR SOT-23
Abstract: TRANSISTOR b 772 p sot-23 rks MA4T645 transistor TE 901 equivalent SOT-143 717 mount chip transistor 332 RKS SOT23 MA4T64500 MA4T64539
Contextual Info: MA4T645 Series M/A-COM Silicon Bipolar High fT Low Noise Microwave Transistors M crow ave Products Case Style Features • • • • • • • A MI RÂF & C G M fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available
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ma4t645ot-23ot-143ma41344+9nd 16 transistor sot-23transistor b 772 psot-23 rkstransistor te 901 equivalentsot-143 717mount chip transistor 332rks sot23ma4t64500ma4t64539
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transistor L44
Abstract: MA4T64535
Contextual Info: Afa Preliminary Specification an A M P c o m p a n y High Reliability Semiconductor Silicon Bipolar Low Noise Transistor ML4T645-S-512 V1.00 ODS 512 Outline Features • • • • fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation
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ml4t645-s-512ml4t645transistor l44ma4t64535 |
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transistor L44
Abstract: L44 TRANSISTOR MA4T645
Contextual Info: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified
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ml4t645-s-512ml4t645transistor l44l44 transistor+1ma4t645
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