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    MA3Z551 Search Results

    MA3Z551 Datasheets (3)

    Panasonic
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MA3Z551
    Panasonic Silicon epitaxial planar type Original PDF 42.64KB 2
    MA3Z551
    Panasonic Diode Original PDF 52.88KB 3
    MA3Z551
    Panasonic DIODE PIN ATTENUATOR 40V 3SC-70 Original PDF 45.91KB 3

    MA3Z551 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3pin variable resistor pin connection

    Abstract: MARKING MY MA3Z551
    Contextual Info: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage


    Original
    ma3z5513pin variable resistor pin connectionmarking my PDF

    MA3Z551

    Contextual Info: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf


    Original
    ma3z551 PDF

    Contextual Info: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain sc te on na tin nc ue e/ d • Small diode capacitance CD • Large variable range of forward dynamic resistance rf


    Original
    ma3z551 PDF

    MA3Z551

    Contextual Info: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original
    ma3z551 PDF

    MA3Z551

    Contextual Info: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage


    Original
    ma3z551 PDF

    MARKING MY

    Abstract: 3pin variable resistor 3pin variable resistor pin connection
    Contextual Info: MA111 PIN Diodes MA3Z551 Silicon epitaxial planer type Unit : mm 2.1±0.1 For attenuation of high-frequency variable resistor 0.425 1.25±0.1 0.425 Small diode capacity CD ● Large variable range of forward dynamic resistance rf ● Mini package, enabling down-sizing of the equipment and automatic


    Original
    ma111ma3z551100mhzmarking my+23pin variable resistor3pin variable resistor pin connection PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide PDF

    MA661

    Contextual Info: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55


    OCR Scan
    ma749/ao-220o-220dama629+7ma3u649ma649/650ma7d49/ama3u750ma3z551ma558ma661 PDF

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan
    1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515 PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928 PDF

    MA629

    Abstract: MA7U49 220d MA750A MA689
    Contextual Info: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)


    OCR Scan
    ma629ma3u649ma3u650ma649+10ma749/ama7d49/aa3u750t0-220o-220dma551ma7u49220dma750ama689 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202 PDF