MA366 Search Results

Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner 5˚ • Large capacitance ratio • Small series resistance rD, resulting in obtaining high performance index, Q of a circuit • S-Mini type package, allowing downsizing of equipment and

MA366

Abstract: V6010
Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner 5˚ • Large capacitance ratio • Small series resistance rD, resulting in obtaining high performance index, Q of a circuit • S-Mini type package, allowing downsizing of equipment and

MA2Z366

Abstract: MA366
Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner Maximum peak reverse voltage * (0.4) 0.9±0.1 Rating Unit VR 34 V VRM 35 V Forward current IF 20 mA Junction temperature Tj 150 °C Storage temperature

Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner Reverse voltage VR Maximum peak reverse voltage * VRM Forward current IF Junction temperature Tj Storage temperature Tstg Note) *: RL = 10 kΩ

Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner 1 Maximum peak reverse voltage * Forward current Junction temperature Storage temperature Note) *: RL = 10 kΩ 0.9±0.1 Rating Unit VR 34 V

MA2Z366

Abstract: MA366
Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit : mm For CATV tuner INDICATES CATHODE 0.4 ± 0.15 Parameter Symbol Rating Unit Reverse voltage (DC) VR 34 V Peak reverse voltage* VRM 35 V Forward current (DC) IF 20 mA Junction temperature

MA366

Abstract: 6H MARKING diode marking 6H
Contextual Info: MA111 Variable Capacitance Diodes MA366 Silicon epitaxial planer type Unit : mm For CATV tuner INDICATES CATHODE ● Large capacity variation ratio ● Small series resistance rD, enabling increase performance index Q in 1 2 +0.1 0.4±0.15 S-Mini package, enabling down-sizing of the equipment and auto-

MA362

Abstract: DIODE D28 06 MA344 MA334
Contextual Info: SS-Mini Type 2 Pins 079 UHF/VHF Tun ins MA2S372 CATV Tuning MA2S357 SHF Tuning UHF/VHF AFC MA2S367 type S-Mini Type S-Mini 2 Pins 2 Pins Flat (D4) (D3) MA360 MA372 MA366 MA365 MA371 MA374 MA357 MA368 MA367 MA372J Mini Type 2 Pins (D U ) Mini Type 3 Pins

MA342-M

Abstract: MA344 MA348 MA353 MA360 MA363 MA365 MA366 MA368
Contextual Info: - 198- m s tt £ MA 342 —M fôT MA344 fêT MA3 48 MA353 fôT MA360 tëT fâT MA363 MA365 fôT MA366 tôT MA367 tôT MA368 fôT MA370 fôT MA371 fôT MA372 «T MA840 «T MV201 ND3Q48-3D BS m ^ rm m f t * S fe Ct, C j * pF p Vrm Vr (mW) (V) (V) min typ AFC

MA344

Abstract: ma840 MA342-M MA348 MA353 MA360 MA363 MA365 MA366 MA368
Contextual Info: - 198- m s tt £ MA 342 —M fôT MA344 fêT MA3 48 MA353 fôT MA360 tëT fâT MA363 MA365 fôT MA366 tôT MA367 tôT MA368 fôT MA370 fôT MA371 fôT MA372 «T MA840 «T MV201 ND3Q48-3D BS m ^ rm m f t * S fe Ct, C j * pF p Vrm Vr (mW) (V) (V) min typ AFC

MA2Z366

Abstract: MA366
Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner Unit Maximum peak reverse voltage * VR 34 V VRM 35 V Forward current IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150

MA2Z366

Abstract: MA366
Contextual Info: Variable Capacitance Diodes MA2Z366 MA366 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For CATV tuner 5˚ • Large capacitance ratio • Small series resistance rD, resulting in obtaining high performance index, Q of a circuit • S-Mini type package, allowing downsizing of equipment and

MA1051

Abstract: MA1056 MA1000 Series MA1240 MA1043 MA1062 MA1150 MA1360 MA3000 Series MA1024
Contextual Info: Diodes IVariable Capacitance Diodes Application Type No. o MA363 MA372 o U H F/ VHF T uning MA321 MA334 MA344 MA360 MA339 Vr V V r (V) 30 2 30 3 30 3 2 2 30 3 30 2 A MA2S372 30 MA372J 32 AU Band Tuning CATV Tuning U H F/ VHF Tuning U H F/ VHF AFC FM-AM AFC

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

MA332

Abstract: MA-332
Contextual Info: S Mini Type 2-pin Package Outline Variable Capacitance Diodes mm m S 5 — M (2 - 5»(2S S rF-)/'i7 *r- V (C j:t^ ij^ 5 0 % C 0 @ illlC ffl < * ;L 5 - S ! ( 2 i S :F-) ¿ H S f O t t f i i i H i# •43 £ • U7 P -, • 8 m m x - fc f> • If lltitt , § « § » 1 1 » « ^ ^ ^ "I

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows