MA301 Search Results

Contextual Info: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3018P10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018P is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3016AM6000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016AM6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

DARLINGTON TRANSISTOR ARRAY

Contextual Info: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed

75150

Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 9 11 12 10 *• 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE

Transistor Array

Abstract: 6a transistor A3018 Transistor 9A transistor military "transistor array" a3045 A726 MA3046 Darlington Transistor low noise
Contextual Info: FAIRCHILD INTERFACE SPECIAL FUNCTIONS Wideband Switching Application 1 mA726 te m p Controlled Diff Pair • • • — — — — 40 30 5.0 5.0 2 mA3018 Matched Transistor Array • • — • • • — 20 15 5.0 50 — 3 mA3018A Matched Transistor Array

Contextual Info: MA3014N30000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3014N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010D10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3016D10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3016AD0000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016AD is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3016M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016M6/N6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck

Contextual Info: MA3010K10000000 N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State 30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610

Contextual Info: MA3014M60000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D051310

Contextual Info: MA3010B10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010B is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3016N30000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010G10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010G is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

transistor BC 667

Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

transistor LIC

Abstract: a3045 3086 A3054 MA3036 MA3046 UA3026HM C3086 6 "transistor arrays" ic MONOLITHIC DIODE ARRAYS
Contextual Info: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R I P T I O N — F a irc h ild T ransistor and D io d e A rra y s co nsist o f general purpose integrated c irc u it devices constructed

A3054

Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

TTL IC 74LS244

Abstract: 75150 IC 74ls244 ECL IC NAND 74LS244 74LS240 74LS241 74S140 E105 MA739
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 148 9 11 9 150 MA1489, mA1489A 149 MA1488 mA739 12 10 *• SUBSTRATE VC C + [14 IN A £ 3 V CC ^ IN D IN D1 13 RESPONSE p CO NTRO L A IN D2 1 ? RESPONSE J CO NTRO L D

Contextual Info: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610