MA194 Search Results

MA194

Abstract: MA4X194
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage

MA194

Abstract: MA4X194
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 0.40+0.10 –0.05 Unit Single Forward current

MA194

Abstract: MA4X194
Contextual Info: Switching Diodes MA4X194 MA194 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 1 0.4 − 0.05 0.5 0.95 4 V 40 V + 0.1 0.16 − 0.06 40 0.1 to 0.3 0 to 0.1 VR VRRM 0.8 Unit + 0.2 Rating 1.1 − 0.1 Symbol 0.4 ± 0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.5R • Small terminal capacitance Ct

Contextual Info: 37bflSSS 0 D n 4 7 4 ÔS4 « P L S B GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3835-1.2 June 1993 MA1941 RADIATION EVENT CIRCUMVENTION UNIT The IC, when used in conjunction with a radiation detector diode, provides user programmable pulses following a

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage

MA194

Abstract: MA4X194
Contextual Info: Switching Diodes MA4X194 MA194 Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) For switching circuits 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage Single Forward current (Average) Double Repetitive peak

Contextual Info: 2SK1036 Switching Diodes MA194 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 1 0.5 0.95 4 0.95 2 3 +0.1 +0.2 Unit Reverse voltage DC VR 40 V Repetitive peak reverse voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA156

Abstract: 154wa MA150 S-Mini A152W MA1015 MA165 MA185
Contextual Info: • Switching Diodes Line-up Surface Mount T y p e SS-Mini Type 2 Pin (D78) SS-Mini Ä , (D2| S-Mini Type (2 Pin) (D3) S-Mini Type (3 Pin) (D 5) S-Mini Type {4 Pin) (D7) S-Mini Type (6 Pin) (DIO) MA10100 Mini Type (3 Pin) (D12) Glass H o le -th ro u g h ty p e

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

MXHP32HP

Abstract: MXHP32HP1000 LQM18FN2R2M00 1uF 250V 10 X7R SMD electrolytic BNX024H01 LQM18FN100M00 GRM1555C1HR50BA01 NCP18XH103J03RB GRM1555C1H390JA0 PRF18BA471QS5RB
Contextual Info: 2010 DESIGN ENGINEERING KITS CATALOG NO. G-06-G Please visit our website: www.murata.com DESIGN ENGINEERING KITS Murata offers a complete selection of Design Engineering Kits specifically intended to aid the design engineer in prototyping applications. Each kit

murata MA Series

Abstract: HPPC ma1033 MA20151JBN MA2039 MA10 MA20 MA69 ma1018 10n 500V capacitor
Contextual Info: A p p l i c at i o n S p e c i f i c Ca pa c i t o r s High Frequency Ceramic Capacitors MA Product Summary MA Series: The MA series highlights performance in a wide range of rated voltage from 50 to 500V. These high Q capacitors are ideal for applications in the

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

3SK184

Abstract: 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14
Contextual Info: —5/ Mini Type 4-pin Package • Outline U n it I mm Diodes 2 -8 ‘ o 3 0 .6 5 t Q 1 5, a w rn 15 — ,0 .6 5 t 0 . 1 5 m - 5 -8 1 (4 • > '« . A, it it i* á 7 ^ r- y T \ r „ iS h £ £ ¥ CM CM <*> ‘ o |o o l ÒK t t S t ? n £ ' M J CD 7 ^ M 'U * - v - y 7 \

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

BNX022-01

Abstract: LQM2MPN4R7NG0 LQW21HN1R0J00 BNX023-01 LQM21PN1R0MC0 NCP18WF104F3SRB capacitor trimmer 50pf 250v MM4829-2702 BNX022-01 Datasheet GCM15-KIT
Contextual Info: 2009 DESIGN ENGINEERING KITS CATALOG NO. G-06-F Please visit our website: www.murata.com DESIGN ENGINEERING KITS Murata offers a complete selection of Design Engineering Kits specifically intended to aid the design engineer in prototyping applications. Each kit

MA164

Abstract: MA373 7400 fan-in MA154 T-42-11-05
Contextual Info: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays

P090

Abstract: MA29 Series MARKING CODE 1P transistor 1p murata marking code high power diode 500v MA29 ma69 marking 1p marking code 54
Contextual Info: CHIP MONOLITHIC CERAMIC CAPACITOR High Frequency/High Power Type MA series Features 1. Miniature sizes 2. Very high Q at high frequency 3. High RF power capabilities 4. Impervious to environmental conditions 5. Low noise W T e g L Chip dimension Sn Ceramics

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

A4056

Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
Contextual Info: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type