M28C16B Search Results

M28C16

Abstract: M28C16B M28C17B PLCC32
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DATA BRIEFING • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

M28C16B

Abstract: M28C17B PLCC32
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■

PLCC32

Abstract: M28C16B M28C17B
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

M28C16B

Abstract: M28C17B PLCC32
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

Contextual Info: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

PDIP28

Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

plcc32

Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in