LS5909 Search Results
LS5909 Functional Equivalents (5)
The Functional Equivalents tab will give you options that are likely to match the same function of LS5909, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| BSD235NH6327XTSA1 | Infineon Technologies AG | $0.1276 | Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| PMGD280UN,115 | Nexperia | $0.2512 | Small Signal Field-Effect Transistor, 0.87A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| FDC637BNZ | onsemi | $0.2526 | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| NTGS5120PT1G | onsemi | $0.3032 | Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| SI1967DH-T1-E3 | Vishay Intertechnologies | $0.3558 | Small Signal Field-Effect Transistor, 1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
LS5909 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LS5909 | Linear Integrated Systems | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Original | 26.13KB | 2 |
LS5909 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted |
Original |
LS5905 LS5906 LS5907 LS5908 LS5909 150fA 500mW 25-year-old, | |
S5908Contextual Info: LINEAR SYSTEMS LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNELJFET Linear Integrated Systems F E A TU R E S LOW DRIFT I V GS1-2/ T I = 5 ^v /° c m a x - ULTRA LOW LEAKAGE LOWPINCHOFF I a = 150fA TYP. Vp= 2VTYP. ABSOLUTE MAXIMUM RATINGS S0TE1 |
OCR Scan |
LS5905 LS5906 LS5907 LS5908 LS5909 150fA LISIS00083 S5908 | |
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Contextual Info: LINEAR SYSTEMS LS5905 LS5906 LS5907 LS59Q8 LS5909 tow LEAKAGE LOW DRIFT Linear Integrated Systems MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT 1 v g s i - 2 / T I = 5 p V /0C m a x . ULTRA LOW LEAKAGE L = 150fATYP. LOW PINCHOFF Vp= 2VTYP. G ABSOLUTE MAXIMUM RATINGS NOTE 1 |
OCR Scan |
LS5905 LS5906 LS5907 LS59Q8 LS5909 150fATYP. | |
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Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT I VGS1-2/ T =5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted |
Original |
LS5905 LS5906 LS5907 LS5908 LS5909 150fA 500mW 25-year-old, | |
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Contextual Info: LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications |
Original |
LS5909 VGS12 150fA | |
LS5905
Abstract: LS5906 LS5907 LS5908 LS5909 MONOLITHIC DUAL N-CHANNEL JFET
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LS5905 LS5906 LS5907 LS5908 LS5909 150fA LS5907 LS5909 MONOLITHIC DUAL N-CHANNEL JFET | |
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Contextual Info: LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications |
Original |
LS5909 VGS12 150fA | |
ultra low Ciss jfetContextual Info: LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications |
Original |
LS5909 VGS12 150fA ultra low Ciss jfet | |
jfet transistor
Abstract: Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice ultra low Ciss jfet Dual PNP Transistor transistor j210 monolithic dual jfet transistor
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LS5905 LS5906 LS5907 LS5908 LS5909 150fA jfet transistor Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice ultra low Ciss jfet Dual PNP Transistor transistor j210 monolithic dual jfet transistor | |
E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
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LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 | |
S5908Contextual Info: LS5905LS5906LS5907 LS5909 LINEAR SYSTEMS LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |AVGS1 _2 /AT|= 5^V/°C max. ULTRA LOW LEAKAGE LG = 150fA TYP. Vp= 2V TYP. LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS MOTE 1 |
OCR Scan |
150fA LS5905LS5906LS5907 LS5908LS5909 LS5905 100Hz S5908 | |
NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
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IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638 |