LH28F016LL Search Results

etox

Abstract: 5ses LH28F008SA LH28F016SU 150NSEC BSR10
Contextual Info: SHARP F e b ru a ry 1 9 9 6 FLASH MEMORY LH28F016LLT-xx SHARP CORPORATION N O TIC E • This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copy­ right laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or

56-PIN

Abstract: LH28F016LL LH28F016SU camera with iCCD matrix BSR10
Contextual Info: LH28F016LL FEATURES • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation 3 V VPP – 2.7 - 3.6 V Write-Erase Operation • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 16M (1M x 16, 2M × 8) Flash Memory

D1553

Abstract: 3100-CC
Contextual Info: SHARP LH28F016LLT 16 MBIT 1 MBIT x 16, 2 MBIT x 8 3V SINGLE VOLTAGE FLASH MEMORY FEATURES • 3V Write/Erase Operation (3V Vpp) - 2.7V-3.6V Write»Erase»Read Operation • User-Configurable x8 or x16 Operation • 120 ns Maximum Access Time (Vcc=3.0V) • 150ns Maxumam Access Time (Vcc=2.7V)

Contextual Info: MEMORES ★ U n d e r d e v e lo p m e n t 5 V Single-Pow er-Supply Flash Mem ories Capacity 2M Configuration Erase block *. 1- • size HOfdSXDItS {bytes} 256k x 8 16k 5 12 k x 8 Model No. Access time (nsi MAX. ★LH28F020SUT/N-N60 60 V cc = 5 V * LH28F020SUT/N-N80

Contextual Info: MEMORIES ★ Under development Supply voltage r a n a r it u L.dpacixy Operating temp. Configuration Erase block Wordsxbits size (bytes) Model No. Access time(ns) -—- 1 8M 1M x 8 64k LH28F008SAH - 40 to 85 5 V/12 V-Dualpower-supply - 25 to 8 5 - >★LH28F008SAH-KF

bsh7

Abstract: f b t bsh7
Contextual Info: SHARP SHARP LHF16L01 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company, # W h e n using the products covered herein, please observe the conditions written herein

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

BA 6688 L

Contextual Info: 16M 1M FEATURES • 120 ns Maximum Access Time (VCC= 3 .0 V • 150 ns Maximum Access Time (VCC= 2 .7 V ) • 0.48 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block T O P V IE W -s 56 □ W P C E ,Z 2 55 □ W E LXZ 3 54 □ ÔË A 20 z