KMM5364100 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC h?E D • 7 ^ 4 1 4 2 D 0 1 5 2 7 M 37=5 ■ SI'IGK KMM5364100H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5364100H-6 tR A C tc A c Irc 60ns 15ns 110ns KMM5364100H-7 70ns 20ns

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic HAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULES KMM5364100H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tcAC tRC 15ns 110ns KMM5364100H-7 70ns 20ns 130ns KMM5364100H-8 80ns 20ns 150ns The KMM5364100H is a S ingle In-line M em ory M odule w ith edge connections and is intended fo r m ounting into

KMM5364100-7

Abstract: Ras 1220
Contextual Info: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit

KM41C4000CJ

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS

KM44C4100AJ

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A1/A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Sam sung KMM5364100A1 is a 4M bit x 36 • Performance Range: D ynam ic RAM high density m em ory module. The

KMM5364100A-7

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOA/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364100A is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A consists of eight CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b?E J> m 7 ^ 4 1 4 2 QGlS2ba 07S KMM5364100/G DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: I rac tcAC I rc 60ns 15ns 110ns KMM5364100-7 70ns 20ns 130ns KMM5354100-8 80ns 20ns 150ns

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAK/AKG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AK is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

Contextual Info: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8

30 pin simm

Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM

M5404000-8

Contextual Info: KMM5404000/G DRAM MODULES 4MX4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: I rac tcAc tftC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8 80ns 20ns 150ns KMM5404000-6 The Samsung KMM5404000 is a 4M bits x 40 Dynamic

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS

Contextual Info: KMM5404100/G DRAM MODULES 4M x 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC tnc KMM5404100-6 60ns 15ns 110ns KMM5404100-7 70ns 20ns 130ns KMM5404100-8 80ns 20ns 150ns The Samsung KMM5404100 is a 4M bits x 40 Dynamic

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode Preliminary 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM53641 OOAKH consists of nine CMOS

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

KMM5334100

Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13

WO4M

Abstract: KMM594
Contextual Info: KMM594100N DRAM MODULES 1 M x 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KMM594100N is a 4M b i t x 9 D ynam ic RAM high d e n sity m em ory m odule. The Sam sung K M M 5 9 4 1 0 0 N c o n s is t o f tw o 4M b it D R A M s

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 b 74 0014^11 DRAM MODULES KMM5404100/G 4MX40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5404100-6 • • • • • • • Irac tcAC tue 60ns 15ns 110ns KM M5404100-7 70ns 20ns

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7