KM64B66 Search Results

h1010

Contextual Info: PRELIMINARY BiCMOS SRAM KM64B66 BiCMOS 1 6 K X 4 Bit Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Time: 10, 12, 15, 20 ns (max.) • Low Power Dissipation S ta n d b y . 20m A (max.) O perating . 160m A (max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM64B66 BiCMOS 1 6 K X 4 Bit Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12, >15, 20ns (max.) • Low Power Dissipation Standby. 20mA (max.) (max.)

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258