K9E2G08U0M Search Results
K9E2G08U0M Datasheets (12)
Samsung Electronics
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| K9E2G08U0M | Samsung Electronics | 256M x 8 Bits NAND Flash Memory | Original | 898.49KB | 38 | ||
| K9E2G08U0M-F | Samsung Electronics | 256M x 8 Bits NAND Flash Memory | Original | 898.49KB | 38 | ||
| K9E2G08U0M-FCB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 | Original | 898.48KB | 38 | ||
| K9E2G08U0M-FIB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 | Original | 898.48KB | 38 | ||
| K9E2G08U0M-P | Samsung Electronics | 256M x 8 Bits NAND Flash Memory | Original | 898.49KB | 38 | ||
| K9E2G08U0M-PCB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48TSOP I | Original | 898.48KB | 38 | ||
| K9E2G08U0M-V | Samsung Electronics | 256M x 8 Bits NAND Flash Memory | Original | 898.49KB | 38 | ||
| K9E2G08U0M-VCB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 | Original | 898.48KB | 38 | ||
| K9E2G08U0M-VIB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 | Original | 898.48KB | 38 | ||
| K9E2G08U0M-Y | Samsung Electronics | 256M x 8 Bits NAND Flash Memory | Original | 898.49KB | 38 | ||
| K9E2G08U0M-YCB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48TSOP I | Original | 898.48KB | 38 | ||
| K9E2G08U0M-YIB0 | Samsung Electronics | IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48TSOP I | Original | 898.48KB | 38 |