K4X56163PI Search Results

K4X56163PI Datasheets (2)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K4X56163PI-L(F)E/GC3		Samsung Electronics	16Mx16 Mobile DDR SDRAM	Original	PDF	306.26KB	20
K4X56163PI-L(F)E/GC6		Samsung Electronics	16Mx16 Mobile DDR SDRAM	Original	PDF	306.26KB	20

K4X56163PI Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4M56163PI Abstract: DDR266 DDR333 60FBGA SDRAM16MX16 Contextual Info: K4X56163PI - L F E/G Mobile DDR SDRAM 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)	Original	k4x56163pi 16mx16 k4m56163pi ddr266 +3ddr333 60fbga sdram16mx16	PDF
K9F2G08U0B Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	br-09-all-001 k9f2g08u0b k9hcg08u1m-pcb0 k9ncg08u5m-pcb0 +7k9f1g08u0c k9f4g08u0b-pcb0 k9f2g08u0b-pcb0 k9f4g08u0b k9wbg08u1m k9f1g08u0c-pcb0 k9g4g08u0b	PDF
K9HCG08U5M Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand Contextual Info: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs	OCR Scan	120gb 128mb 256mb 512mb +10k9hcg08u5m k9wbg08u1m k9lag08u0m-pcb0 kmafn0000m kmbgn0000a k9mdg08u5m-pcb0 k4m56323pi mccoe32gqmpq-m k4m56163pi movinand	PDF

Catalog Datasheet

Type

Document Tags

PDF

K4M56163PI

Abstract: DDR266 DDR333 60FBGA SDRAM16MX16
Contextual Info: K4X56163PI - L F E/G Mobile DDR SDRAM 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)

Original

k4x56163pi 16mx16 k4m56163pi ddr266 +3

PDF

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

Original

br-09-all-001 k9f2g08u0b k9hcg08u1m-pcb0 k9ncg08u5m-pcb0 +7

PDF

K9HCG08U5M

Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Contextual Info: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs

OCR Scan

120gb 128mb 256mb 512mb +10

PDF