JUL13 Search Results

Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811(7 LINE) FAX:(07) 821-5815 FOR MESSRS: DATE: JuL13.2007 CUSTOMER’S ACCEPTANCE SPECÏFICATIONS SP14Q006 CONTENTS No. ITEM SHEET No.

Contextual Info: FUF3A . FUF3M 3.0 Amp. Surface Mount Glass Passivated Ultrafast Recovery Rectifier Current 3.0 A Voltage 50 to 1000 V R DO-214AB SMC FEATURES • Low profile package • Ideal for automated placement • Ultrafast recovery time for high efficiency

MMA845x

Abstract: Wearable Heart Rate Monitor FXOS8700CQ MMA955X MPY8600DK6T1
Contextual Info: TM August 2013 • Freescale Sensors Overview • Freescale Sensor Portfolio − Linear Inertial Sensors - Accelerometers − Linear Inertial Sensors - Intelligent Sensor Hub − Rotational Inertial & Magnetic Sensors - Gyro & Magnetometers − Pressure Sensors

ph74

Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Contextual Info: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo

BCR141T

Abstract: SC75
Contextual Info: BCR141T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75

BCR146W

Abstract: VSO05561
Contextual Info: BCR146W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR148T

Abstract: SC75
Contextual Info: BCR148T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR148T WEs Pin Configuration 1=B 2=E Package 3=C SC75

BCR133

Contextual Info: BCR133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23

BAS21 SOD323

Abstract: BAS21-03W
Contextual Info: BAS21-03W 2 Silicon Switching Diode 1
For high-speed switching applications
High breakdown voltage VPS05176 Type BAS21-03W Marking D Pin Configuration 1=C 2=A Package SOD323 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 200 Peak reverse voltage-

BCR146

Contextual Info: BCR146 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR146 WLs Pin Configuration 1=B 2=E Package 3=C SOT23

Q62702-B0869

Abstract: Q62702-B0873 Diode smd code 72 VES05991 DIODE T25 4 C 25V DIODE SMD T25
Contextual Info: BB 565 Silicon Variable Capacitance Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance 2 • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to 1 "in-line" matching assembly procedure

BCR142T

Abstract: SC75
Contextual Info: BCR142T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75

Contextual Info: Power Modules Upgraded flowPIM 0 + PFC for Drive Applications Requiring PFC Vincotech extends product line with state-of-the-art components and extended power range ® flowPIM 0 + PFC 2nd 17 x 66 x 33 mm³ Vincotech has unveiled the latest generation flowPIM® 0 + PFC 2nd

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

Contextual Info: BFS17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR135W

Abstract: VSO05561
Contextual Info: BCR135W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR135W WJs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR139

Contextual Info: BCR139 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR139 WYs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

4.7uH inductor

Abstract: Murata LQH32CN*M11 IR LED infrared led data sheet IR LED infrared led IR LED FOR 38KHZ LQH32CN4R7M11 "Infrared LED" 10uH inductor C3216X5R1C106K pwm 555 driver application
Contextual Info: Solved by APPLICATION NOTE ANP30 TM SP6691 Remote Control 100kHz Infrared LED Driver The Infrared IR LED used in a remote control is an application for an LED driver that has specific requirements that may exceed the requirements for a typical LED driver application. For this application, the IR LED driver will run off a 9V

Contextual Info: FSSL42 - FSSL44 4.0 Amp. Surface Mount Low VF Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 40 V DO-214AB SMC FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability

BCR148W

Abstract: VSO05561
Contextual Info: BCR148W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR148W WEs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR141

Contextual Info: BCR141 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR141 WDs Pin Configuration 1=B 2=E Package 3=C SOT23

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

Contextual Info: 1NR5391GP . 1NR5399GP 1.5 Amp. Glass Passivated Junction Rectifier Current 1.5 A at 70º C Voltage 50V to 1000 V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction