IXTF280N055T Search Results

Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET IXTF280N055T VDSS ID25 = 55 V = 150 A ≤ 3.5 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

IXTF280N055T

Abstract: 4525G offline UPS 50NC50
Contextual Info: Advance Technical Information TrenchMVTM Power MOSFET IXTF280N055T VDSS ID25 = 55 V = 160 A Ω ≤ 4.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information TrenchMVTM Power MOSFET IXTF280N055T VDSS ID25 = 55 V = 160 A Ω ≤ 4.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; R

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

isoplus ixys mounting

Abstract: isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTF200N10T IXTF250N075T IXTF280N055T
Contextual Info: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 4 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i4-PaksTM NEXT GENERATION 55V TO 100V TRENCH POWER MOSFETS

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.