IXGH50N60C4 Search Results

IXGH50N60C4 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGH50N60C4		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO247	Original	PDF		6

IXGH50N60C4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGH50N60C4D1 Abstract: IXGQ50N60C4D1 G50N60 g50n Contextual Info: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V	Original	ixgq50n60c4d1 ixgh50n60c4d1 ic110 if110 +3o-247 g50n60 g50n	PDF
g50n60 Abstract: g50n Contextual Info: High-Gain IGBTs IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixga50n60c4 ixgp50n60c4 ixgh50n60c4 ic110 +6o-263 o-220ab o-247 50n60c4 g50n60 g50n	PDF
Contextual Info: High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V	Original	ic110 ixgq50n60c4d1 ixgh50n60c4d1 if110 +1o-247	PDF
g50n60 Contextual Info: High-Gain IGBTs VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 ixga50n60c4 ixgp50n60c4 ixgh50n60c4 +4o-263 o-220ab 50n60c4 g50n60	PDF
G50N60 Abstract: IXGH50N60C4D1 IXGQ50N60C4D1 Contextual Info: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V	Original	ixgq50n60c4d1 ixgh50n60c4d1 ic110 if110 +2o-247 g50n60	PDF
g50n60 Abstract: 50N60C4 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Contextual Info: High-Gain IGBTs IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixga50n60c4 ixgp50n60c4 ixgh50n60c4 ic110 +6o-263 o-220ab o-247 le00v 50n60c4 g50n60	PDF