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IXGF20N250 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGF20N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 23A 100W I4-PAK	Original	PDF		5

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IXYS Corporation IXGF20N250 IGBTs DiscIGBT NPT-Very Hi Voltage I4-PAK ISO+
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGF20N250					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXGF20N250 DiscIGBT NPT-Very Hi Voltage I4-PAK ISO+
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXGF20N250	Bulk		8 Weeks	25	1 - 10 - 100 $90.05 1000 $90.05 10000 $90.05	Get Quote

IXGF20N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	ixgf20n250 20n250 7-12-a	PDF
IXGF20N250 Abstract: 20N25 Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	ixgf20n250 ts140 20n250 4p-p528 +22-04-09-a 20n25	PDF
Contextual Info: Preliminary Technical Information IXGF20N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500	Original	ixgf20n250 50/60hz 20n250 4p-p528 +12-04-09-a	PDF
IXGF20N250 Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixgf20n250 20n250	PDF
Contextual Info: High Voltage IGBT VCES = 2500V IC25 = 23A VCE sat ≤ 3.1V IXGF20N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	ixgf20n250 20onds 20n250 7-12-a	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	o-264 ixbx55n300 plus247 ixbf55n300 +12o-268 o-247 ixgf30n400 ixgf4n400 ixgf25n250 pulser isoplus ixgf54n400 discrete igbts ixth1n250 ixbx64n250 ixgt25n250	PDF