IXFV52N30PS Search Results
IXFV52N30PS Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXFV52N30PS |
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Discrete MOSFETs: HiPerFET Power MOSFETS | Original | 701.63KB | 5 |
IXFV52N30PS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = = RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A 73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C |
Original |
IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P | |
52N30P
Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
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Original |
IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30 | |
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Contextual Info: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P |