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IXFH52N30P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH52N30P		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	701.63KB	5

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IXYS Corporation IXFH52N30P Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH52N30P		206		8	1 - 10 $7.18 100 $6.08 1000 $5.31 10000 $5.31	Buy Now
Newark	IXFH52N30P	Bulk	31		1	1 $10.49 10 $5.70 100 $5.37 1000 $5.15 10000 $5.15	Buy Now
TTI	IXFH52N30P	Tube	240		30	1 - 10 - 100 $5.64 1000 $5.21 10000 $5.21	Buy Now
Future Electronics	IXFH52N30P	Tube		27 Weeks	300	1 - 10 - 100 $6.12 1000 $6.05 10000 $6.00	Buy Now
Bristol Electronics	IXFH52N30P		30		1	1 $7.77 10 $5.05 100 $3.89 1000 $3.89 10000 $3.89	Buy Now

Quest Components ()	IXFH52N30P		24			1 $12.27 10 $8.18 100 $8.18 1000 $8.18 10000 $8.18	Buy Now
	IXFH52N30P		24			1 $10.22 10 $5.11 100 $5.11 1000 $5.11 10000 $5.11	Buy Now
TME	IXFH52N30P		206		1	1 $9.61 10 $6.48 100 $5.15 1000 $4.66 10000 $4.66	Buy Now
Littelfuse Inc IXFH52N30P Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH52N30P		15		15	1 - 10 - 100 $8.39 1000 $8.39 10000 $8.39	Buy Now
RS	IXFH52N30P	Bulk		8 Weeks	30	1 - 10 - 100 $7.46 1000 $7.46 10000 $7.46	Get Quote
Onlinecomponents.com	IXFH52N30P					1 - 10 - 100 $6.25 1000 $4.29 10000 $4.29	Buy Now

IXFH52N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	ixfv52n30p ixfv52n30ps ixfh52n30p 200ns +2plus220 52n30p	PDF
52N30P Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30 Contextual Info: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfv52n30p ixfv52n30ps ixfh52n30p 200ns +6plus220 100ms 52n30p 3-14-06-c plus220smd 52n30	PDF
Contextual Info: Advanced Technical Information IXFH52N30P IXFT52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings	Original	ixfh52n30p ixft52n30p o-268 o-247ad +152n30p	PDF
Contextual Info: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfv52n30p ixfv52n30ps ixfh52n30p 200ns +4plus220 100ms 52n30p 3-14-06-c	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF