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    IXFH52N30P Search Results

    IXFH52N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH52N30P
    		IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF 701.63KB 5
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    IXFH52N30P Price and Stock

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    Littelfuse Inc IXFH52N30P

    MOSFET N-CH 300V 52A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH52N30P Tube 219 1
    • 1 $7.88
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    • 100 $5.38
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    IXYS Corporation IXFH52N30P

    MOSFETs 52 Amps 300V 0.066 Rds
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    Mouser Electronics IXFH52N30P 3,529
    • 1 $8.22
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    Verical IXFH52N30P 282 9
    • 1 -
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    • 100 $6.37
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    Future Electronics IXFH52N30P Tube 300
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    Bristol Electronics IXFH52N30P 30 1
    • 1 $7.63
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    • 100 $3.82
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    Quest Components () IXFH52N30P 24
    • 1 $10.22
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    IXFH52N30P 24
    • 1 $12.27
    • 10 $8.18
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    TTI IXFH52N30P Tube 300 30
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    TME IXFH52N30P 282 1
    • 1 $7.56
    • 10 $6.08
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    IBS Electronics IXFH52N30P 600 30
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    New Advantage Corporation IXFH52N30P 671 1
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    Vyrian IXFH52N30P 363
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    IXYS Corporation IXFH52N30P (POLAR HIPERFET)

    Mosfet, N-Ch, 300V, 52A, To-247 Rohs Compliant: Yes |Ixys Semiconductor IXFH52N30P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFH52N30P (POLAR HIPERFET) Bulk 190 1
    • 1 $7.73
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    • 100 $5.78
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    IXFH52N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P PDF

    52N30P

    Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
    Contextual Info: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30 PDF

    Contextual Info: Advanced Technical Information IXFH52N30P IXFT52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings


    Original     		IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P PDF

    Contextual Info: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF