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    IXFV26N60PS Search Results

    IXFV26N60PS Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFV26N60PS
    IXYS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Original PDF 249.71KB 5

    IXFV26N60PS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFH26N60P

    Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
    Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+6o-24726n60p26n60ps26n60plus220smdixfh26n60 PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+426n60p26n60pso-247plus220smd PDF