IXFT26N60P Search Results
IXFT26N60P Datasheets (1)
IXYS
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXFT26N60P |
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N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | Original | 248.13KB | 5 |
IXFT26N60P Price and Stock
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Littelfuse Inc IXFT26N60PDiscmosfetn-Ch Hiperfet-Polar To-268Aa/; |Littelfuse IXFT26N60P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFT26N60P | Bulk | 300 |
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Buy Now | ||||||
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IXFT26N60P | Bulk | 8 Weeks | 30 |
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IXFT26N60P |
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IXYS Corporation IXFT26N60PMOSFETs 600V 26A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFT26N60P | Tube | 300 |
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IXFT26N60P | 1 |
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IXFT26N60P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXFH26N60P
Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
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Original |
ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+6 | |
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Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
Original |
ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+4 |