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    IXFN64N50PD2 Search Results

    IXFN64N50PD2 Functional Equivalents (5)

    The Functional Equivalents tab will give you options that are likely to match the same function of IXFN64N50PD2, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    IXFN80N50Q3 IXYS Corporation $39.4091 Power Field-Effect Transistor, 63A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IXFN75N50 IXYS Corporation Check for Price Power Field-Effect Transistor, 75A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IXFN61N50 IXYS Corporation Check for Price Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    APT50M60JN Advanced Power Technology Check for Price Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    APT20M25JNR Advanced Power Technology Check for Price Power Field-Effect Transistor, 100A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    IXFN64N50PD2 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN64N50PD2
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 52A SOT-227B Original PDF 2
    SF Impression Pixel

    IXFN64N50PD2 Price and Stock

    IXYS Corporation

    IXYS Corporation IXFN64N50PD2

    MOSFET N-CH 500V 52A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN64N50PD2 Tube 10
    • 1 -
    • 10 $22.34
    • 100 $22.34
    • 1000 $22.34
    • 10000 $22.34
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    IXFN64N50PD2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN64N50PD2

    Abstract: 64N50P SOT227B package 64N50
    Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ


    Original     		IXFN64N50PD2 IXFN64N50PD3 OT-227 E153432 200ns 64N50P IXFN64N50PD2 SOT227B package 64N50 PDF

    IXFN64N50PD2

    Abstract: IXFN64N50PD3
    Contextual Info: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A   85m  200ns


    Original     		IXFN64N50PD2 IXFN64N50PD3 E153432 200ns IXFN64N50PD2 IXFN64N50PD3 PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN64N50PD2 IXFN64N50PD3 RDS on Boost & Buck Configurations (Ultra-fast FRED Diode) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ


    Original     		IXFN64N50PD2 IXFN64N50PD3 OT-227 E153432 200ns 64N50P PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF