IRG4PH50U Search Results

IRG4PH50U

Abstract: TO-247AC Package IRG4PH50U
Contextual Info: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PH50UDPBF

Abstract: 135ns 035H IRFPE30
Contextual Info: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

Contextual Info: P D - 9.1574 International I R Rectifier IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

ge-20 transistor

Abstract: IRG4PH50UPBF 035H IRFPE30 960V
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30
Contextual Info: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

035H

Abstract: IRFPE30 diode Marking code WT
Contextual Info: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

035H

Abstract: IRFPE30
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

C2335

Contextual Info: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,

Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IR 1838 T

Abstract: IGBT W 20 NK 50 Z IRG4PH50UD
Contextual Info: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

irg4ph50u

Abstract: TO-247AC Package IRG4PH50U
Contextual Info: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

TO-247AC Package IRG4PH50U

Abstract: 24V 10A SMPS IRG4PH50U 91574
Contextual Info: PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PH50UD

Abstract: IR 1838 T
Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRG4PH50UD

Abstract: IR 1838 T
Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRG4PH50U

Abstract: eb 2030 *g4ph50u
Contextual Info: International IQR Rectifier PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

U2335

Abstract: 24V 20A SMPS 035H IRFPE30 24V 10A SMPS ic
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PH50U

Contextual Info: PD - 91574A IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC30S

Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
Contextual Info: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage

IPM PLASMA

Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
Contextual Info: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and

IRG4CH50UB

Abstract: IRG4PH50U ir igbt 1200V 10A
Contextual Info: PD- 91775 IRG4CH50UB IRG4CH50UB IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V (BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision