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    IRFY320 Search Results

    IRFY320 Datasheets (4)

    Semelab
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFY320
    Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF 11.07KB 1
    IRFY320
    Semelab N-Channel Power MOSFET for HI-REL Apps Scan PDF 98.7KB 2
    IRFY320C
    Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF 11.06KB 1
    IRFY320SM
    Semelab Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications Scan PDF 98.7KB 2

    IRFY320 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFY320

    Contextual Info: IRFY320 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 3.3A RDS(ON) = 1.8Ω Ω 1.0 (0.039)


    Original
    irfy320o257abo220m13-sep-02 PDF

    IRFY320

    Abstract: LE17
    Contextual Info: bOE D • filBBlfi? DQQOSSb fiTfi ■ S f l L B SENELAB PLC ^ T ‘3 ^ - I V SEM ELAB IRFY320 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS r y FEATURES • HERMETIC T 0 2 2 0 METAL OR CERAMIC SURFACE M O U N T PACKAGES


    OCR Scan
    irfy320t0220t0220mt0220sm+200a//xsle17 PDF

    IRFY320C

    Contextual Info: IRFY320C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 3.3A RDS(ON) = 1.8Ω Ω 1.0 (0.039)


    Original
    irfy320co257abo220m13-sep-02 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    2c4152c4252c4442c746+162n1131l2n11322n1132csm2n1132dcsm2n12082n1209diode 400v 5alm1083bzy55ctransistor 2n1208bc109 spiceirf9024cv7404mnt6337jsml1258sml1004rgn PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80 PDF

    lm3i7

    Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
    Contextual Info: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24


    OCR Scan
    in4001csmuin4003csmd60dcsm222ia+162n2221dcsm2n2222adcsm2n2222dcsm2n2369adcsm2n2453d2n2639dcsmlm3i7bfd22ic lm7812lm3i7-220mlti086pi38a2n3904dlm7924bfd48byvi43-35m PDF