IRF9620S Search Results

IRF9620S

Contextual Info: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount

Contextual Info: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount

AN609

Abstract: IRF9620S
Contextual Info: IRF9620S_RC, SiHF9620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S Available RoHS* COMPLIANT DESCRIPTION The Power MOSFETs technology is the key to Vishay’s

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

pj 68 SMD diode

Abstract: 1RF9620 IRF9620 DIODE marking CJSS ScansUX102 SMD 1DV 19
Contextual Info: International PôkIRectifier PD-9.351 F IRF9620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - -200V ^DS on = 1 lD = -3.5A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line

90980

Abstract: IRFI540G h6 SMD SMD BR 42
Contextual Info: I n t e r n a t i o n a l R e c t if ie r mm HEXFET " Power MOSFETS V BR DSS Drairt-to-Source BreakdownVoltage (Vohs) Put Number RdS<wi) On-Stata Resistan« (3) (Ohms) IßContinuous Drain Current 25"C 100°C (Amps) (Amps) row ) PD«Tc=25"C Max Power Dissipation

IRF9530S

Abstract: smd H5 08 SMD BR 88
Contextual Info: International lÜRectifier HEXFET Power MOSFETs Surface Mount S M D -2 2 0 These devices provide the highest power capacity and lowest possible on-resistance in a surface mount package. They can dissipate up to 2W in a typical surface mount application and are available in tape and reel.

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES

9137

Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Contextual Info: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.

LL110

Abstract: IRF7423 IRFR1205 equivalent IRLR2905 SMD 3F smd transistor IRLR024N IRF7389 irf7309 irlms4502 IRFR5410
Contextual Info: International Rectifier Existing Product The HEXFET SMD Navigator NEW UPCOMING Products Products released to to be released production in last 6- within next 3-4 9 months months Potential products no current plans. see bus.mgmt. Effective 6 October, 1999

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566