IRF5210 Search Results
IRF5210 Datasheets (23)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRF5210 | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) | Original | 129.52KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210 | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF5210 with Standard Packaging | Original | 133.72KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210 | Semelab | Transistor - Datasheet Reference | Original | 25.41KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -100V, -35A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210L | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF5210L with Standard Packaging | Original | 201.76KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210L | International Rectifier | HEXFET Power MOSFET | Original | 197.56KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210LPBF | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF5210L with Lead Free Packaging | Original | 201.76KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210LPBF | International Rectifier | Original | 197.56KB | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210PBF | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF5210 with Lead Free Packaging | Original | 133.72KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210PBF | International Rectifier | Original | 129.53KB | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210S | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Standard Packaging | Original | 201.76KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210S | International Rectifier | HEXFET Power MOSFET | Original | 197.56KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210S | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210SPBF | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging | Original | 201.76KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210SPBF | International Rectifier | Original | 197.56KB | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRL | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package | Original | 197.55KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRL | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Left Packaging | Original | 201.76KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRLPBF | International Rectifier | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRLPBF | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging shipped on Tape and Reel Left | Original | 201.76KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5210 Price and Stock
Infineon Technologies AG IRF5210PBFTrans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF5210PBF | 65,907 | 9 |
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Buy Now | ||||||
| IRF5210PBF | 28,668 | 271 |
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| IRF5210PBF | 3,404 | 2 |
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| IRF5210PBF | 47 | 39 |
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IRF5210PBF | Tube | 4,964 | 44 Weeks | 1 |
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| IRF5210PBF | Bulk | 1 |
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IRF5210PBF | 65,912 | 44 Weeks | 1 |
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| IRF5210PBF | 3,404 | 44 Weeks | 1 |
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IRF5210PBF | Bulk | 2,140 | 1 |
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IRF5210PBF | Bulk | 1 |
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Get Quote | ||||||
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IRF5210PBF | 37 |
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IRF5210PBF | 28,668 | 1 |
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IRF5210PBF | 3,193 | 1 |
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IRF5210PBF | 14,000 | 17 Weeks | 1,000 |
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Buy Now | |||||
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IRF5210PBF | 45,560 |
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Buy Now | |||||||
Infineon Technologies AG IRF5210STRLPBFTrans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF5210STRLPBF | 6,032 | 2 |
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Buy Now | ||||||
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IRF5210STRLPBF | Tape & Reel | 45,600 | 48 Weeks | 800 |
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Buy Now | ||||
| IRF5210STRLPBF | Ammo Pack | 1 |
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IRF5210STRLPBF | Cut Strips | 6,032 | 48 Weeks | 1 |
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IRF5210STRLPBF | Tape & Reel | 18,545 | 100 |
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| IRF5210STRLPBF | Cut Tape | 18,545 | 1 |
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IRF5210STRLPBF | 289 | 1 |
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IRF5210STRLPBF | 51 | 1 |
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IRF5210STRLPBF | 695 |
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Get Quote | |||||||
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IRF5210STRLPBF | 82,400 | 49 Weeks | 800 |
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Buy Now | |||||
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IRF5210STRLPBF | 44,000 |
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Buy Now | |||||||
Infineon Technologies AG IRF5210STRRPBFTrans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF5210STRRPBF | 3,035 | 188 |
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| IRF5210STRRPBF | 901 | 188 |
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IRF5210STRRPBF | Bulk | 800 |
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IRF5210STRRPBF | 3,936 | 1 |
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IRF5210STRRPBF | 490 |
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IRF5210STRRPBF | 44,460 |
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International Rectifier IRF5210STRRPBFIRF5210STRRPBF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF5210STRRPBF | 800 | 188 |
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Buy Now | ||||||
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IRF5210STRRPBF | 800 | 1 |
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Buy Now | ||||||
Infineon Technologies AG IRF5210PBF.Mosfet, P To-220 Tube 50; |Infineon Technologies IRF5210PBF. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF5210PBF. | Bulk | 1 |
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IRF5210 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IRF5210 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D VDSS = -100V The TO-220 package is universally preferred for all |
Original |
irf5210o-220ab-100vo-220 | |
IRF5210
Abstract: SHD230452
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Original |
shd230452irf5210-250ma | |
IRF5210Contextual Info: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) |
Original |
irf521000a/ms300ms | |
IRF5210
Abstract: IRF5210S 1405B
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Original |
1405birf5210s-100virf5210 | |
irf5210sContextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L |
Original |
7049airf5210spbfirf5210lpbfirf5210s/l+4 | |
IRF5210
Abstract: SHD225452
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Original |
shd225452irf5210s-100shd225452s+1 | |
IRF5210Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A |
Original |
irf5210pbf-100vo-220o-220ab+1 | |
IRF5210L
Abstract: IRF5210S
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Original |
irf5210s91405cirf5210s/lirf5210l+1 | |
1ActcContextual Info: PD 9.1434 International Iö R Rectifier IRF5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistancw Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channet Fully Avalanche Rated V d s s = -1 0 0 V RüS on = 0.06Q |
OCR Scan |
irf5210o-2201actc | |
IRF5210L
Abstract: IRF5210S
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Original |
91405cirf5210s/lirf5210sirf5210l+1 | |
IRF7205
Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
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OCR Scan |
bss84bss92bs250bss83+11 | |
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Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L |
Original |
7049airf5210spbfirf5210lpbfirf5210s/l+3 | |
IRF5210L
Abstract: IRF5210S
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Original |
91405cirf5210s/lirf5210sirf5210l+1 | |
IRF5210
Abstract: shd230452
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Original |
shd230452irf5210030typlcc-28t | |
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IRF5210PBFContextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A |
Original |
irf5210pbf-100vo-220o-220ab | |
IRF5210PBFContextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A |
Original |
irf5210pbf-100vo-220o-220ab | |
IRF5210
Abstract: 91434A
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Original |
1434airf5210-100vo-220+1 | |
shd225452
Abstract: IRF52
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Original |
shd225452irf5210s-100shd225452s+3 | |
IRF5210
Abstract: irf1010 applications IRF1010
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Original |
irf5210-100virf1010 applicationsirf1010 | |
IRF5210PBFContextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A |
Original |
irf5210pbf-100vo-220o-220ab | |
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Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L |
Original |
97049birf5210spbfirf5210lpbfirf5210s/l+3 | |
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Contextual Info: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L |
Original |
irf5210spbfirf5210lpbfirf5210s/l-100v+2 | |
IRF5210Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description |
Original |
1434airf5210-100vo-220 | |
irf521oContextual Info: PD -91405C International Iö R Rectifier IRF5210S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF521 OS • Low-profile through-hole (IRF5210L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated |
OCR Scan |
rf521irf5210lirf521o | |