IKW50N60T Search Results

k50t60

Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

k50t6

Abstract: k50t60 K50T
Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •            C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

k50t60

Abstract: IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60
Contextual Info: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

K50T60

Abstract: Q67040S4718 IKW50N60T
Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

k50t60

Abstract: K50t60 igbt
Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

IKW50N60T

Abstract: K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3
Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Contextual Info: TRENCHSTOP Series IKW50N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s

k50t60

Abstract: k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt
Contextual Info: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs

Contextual Info: IGP50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

G50T60

Abstract: G50T60 igbt IGW50N60T IGP50N60T IKW50N60T PG-TO-220-3-1 PG-TO-247-3-21 IC 3140
Contextual Info: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :

IKW50N60T

Abstract: SIGC28T60S L7561D L7561 IKW50N60
Contextual Info: SIGC28T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC28T60S VCE ICn 600V 50A This chip is used for:

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

G50T60

Abstract: IGB50N60T IKW50N60T PG-TO263-3-2 PG-TO-263-3-2
Contextual Info: IGB50N60T p TrenchStop Series Low Loss IGBT in TrenchStop® technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for frequency inverters for washing machines, fans,

Contextual Info: TrenchStop Series IGB50N60T p Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters

200nC

Abstract: G50T60 IGB50N60T
Contextual Info: IGB50N60T p TrenchStop Series Low Loss IGBT in TrenchStop® technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for frequency inverters for washing machines, fans,

G50T60

Abstract: IKW50N60T igb50n60 Q67040S4721
Contextual Info: TrenchStop Series IGB50N60T p Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters

Contextual Info: TRENCHSTOP Series IGB50N60T p Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans,

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

G50T60

Contextual Info: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]

G50T60

Abstract: IGB50N60T IKW50N60T
Contextual Info: TrenchStop Series IGB50N60T p Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters

IKW40N120H3

Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
Contextual Info: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz

G50T60

Abstract: IKW50N60T IGP50N60T IGW50N60T PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Contextual Info: TrenchStop Series IGP50N60T IGW50N60T Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :