IDT70V26S Search Results

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. • FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the same m em ory location High-speed access — Com mercial: 25/35/55ns max.

Contextual Info: IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.)

A12L

Abstract: A13L IDT70V26 IDT70V26S S2858 Shared resource arbitration
Contextual Info: PRELIMINARY IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Devices are capable of withstanding greater than 2001V electrostatic charge.

A12L

Abstract: A13L IDT70V26 IDT70V26S 70V26L
Contextual Info: PRELIMINARY IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.

A12L

Abstract: A13L IDT70V26 IDT70V26S l2945
Contextual Info: Š Features ◆ ◆ ◆ ◆ IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.)

A12L

Abstract: A13L IDT70V26 IDT70V26S
Contextual Info: IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V26S

A12L

Abstract: A13L IDT70V26 IDT70V26S
Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

Contextual Info: INTEGRATE» DEVICE bflE D • M Ô 2 S 7 7 1 G0]»43Sb 523 ■ IDT HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc FEATURES: True D ual-Ported m em ory cells w hich allow sim ulta­ neous reads of the sam e m em ory location

A12L

Abstract: A13L IDT70V26 IDT70V26S
Contextual Info: PRELIMINARY IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation

A12L

Abstract: A13L IDT70V26 IDT70V26S
Contextual Info: PRELIMINARY IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.

A12L

Abstract: A13L IDT70V26 IDT70V26S
Contextual Info: IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.)

Contextual Info: IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V26S

Contextual Info: Š Features ◆ ◆ ◆ ◆ IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.)

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L In te g ra ted D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. • FEATURES: • True Dual-Ported m em ory cells w hich allow sim ulta­ neous access of the sam e m em ory location • H igh-speed access — Com m ercial: 25/35/55ns max.

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L In te g ra ted D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access

A13L

Abstract: IDT70V26 IDT70V26S A12L
Contextual Info: IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V26S

Contextual Info: H IG H -SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L F e a tu re s * * True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access - * ♦ Commercial: 25/35/55ns max. ♦ Low-power operation

Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Devices are capable of withstanding greater than 2001V electrostatic charge.

G84-3

Abstract: A12L A13L IDT70V26 IDT70V26S
Contextual Info: PRELIMINARY IDT70V26S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Devices are capable of withstanding greater than 2001V electrostatic charge.

ics633m

Abstract: ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0607-06 DATE: 29-Sep-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: PLCC, SOIC 150 mil/300 mil (Standard Package)

Contextual Info: h S« Idt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.) • Low-power operation

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SM 0008-04 DATE: Product Affected: 256K & 512K Dual Port Family (refer to attached list for product details) Manufacturing Location Affected:

IDT82V1671AJ

Abstract: EME-G700 G700LX EME-G770 Ablebond 8361 JESD22-B116 IDT7025S35JI ablestik 8390 CRM1076 JESD22-B100-b
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0601-01 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 21-Mar-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: