HWS383
Abstract: QFN12L
Contextual Info: HWS383 March 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process Description
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HWS383
Abstract: 50GHZ QFN12L
Contextual Info: HWS383 June 2003 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process Description The HWS383 is a GaAs PHEMT MMIC DPDT
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HWS383
Abstract: pHEMT 6GHz 50GHZ QFN12L
Contextual Info: HWS383 GaAs DC-6GHz DPDT Switch June 2003 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process
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HWS410
Abstract: 50GHZ HWS383 QFN12L
Contextual Info: HWS410 February 2004 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb) Free Package PHEMT process
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Contextual Info: HWS420 July 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss: 0.7 dB @ 2.5 GHz • • • • • 1.0 dB @ 4.9 to 6.0 GHz Isolation: 27 dB @ 2.5 GHz 20 dB @ 4.9 to 6.0 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process
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Contextual Info: HWS410 March 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb) Free Package
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HWS383
Abstract: HWS420 QFN12L
Contextual Info: HWS420 GaAs DC-6 GHz DPDT Switch Sptember 2006 QFN12L 3 x 3 mm Features • Low Insertion Loss: 0.7 dB @ 2.5 GHz • • • • • 1.0 dB @ 4.9 to 6.0 GHz Isolation: 27 dB @ 2.5 GHz 20 dB @ 4.9 to 6.0 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package,
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l
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HWS410
Abstract: qfn12 HWS383 QFN12L
Contextual Info: HWS410 GaAs DC-6 GHz DPDT Switch September 2006 V3 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb)
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