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    HWS383 Search Results

    HWS383 Datasheets (1)

    Hexawave
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HWS383
    Hexawave GAAS Mmic Switch Original PDF 82.84KB 2

    HWS383 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HWS383

    Abstract: QFN12L
    Contextual Info: HWS383 March 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process Description


    Original
    hws383qfn12l11a/b/g PDF

    HWS383

    Abstract: 50GHZ QFN12L
    Contextual Info: HWS383 June 2003 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process Description The HWS383 is a GaAs PHEMT MMIC DPDT


    Original
    hws383qfn12l50ghz85ghz PDF

    HWS383

    Abstract: pHEMT 6GHz 50GHZ QFN12L
    Contextual Info: HWS383 GaAs DC-6GHz DPDT Switch June 2003 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process


    Original
    hws383qfn12l50ghz85ghz+1phemt 6ghz PDF

    HWS410

    Abstract: 50GHZ HWS383 QFN12L
    Contextual Info: HWS410 February 2004 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb) Free Package PHEMT process


    Original
    hws410qfn12l50ghz85ghz+1hws383 PDF

    Contextual Info: HWS420 July 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss: 0.7 dB @ 2.5 GHz • • • • • 1.0 dB @ 4.9 to 6.0 GHz Isolation: 27 dB @ 2.5 GHz 20 dB @ 4.9 to 6.0 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process


    Original
    hws420qfn12lhws38311a/b/g PDF

    Contextual Info: HWS410 March 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb) Free Package


    Original
    hws410qfn12lhws38311a/b/g PDF

    HWS383

    Abstract: HWS420 QFN12L
    Contextual Info: HWS420 GaAs DC-6 GHz DPDT Switch Sptember 2006 QFN12L 3 x 3 mm Features • Low Insertion Loss: 0.7 dB @ 2.5 GHz • • • • • 1.0 dB @ 4.9 to 6.0 GHz Isolation: 27 dB @ 2.5 GHz 20 dB @ 4.9 to 6.0 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package,


    Original
    hws420qfn12lhws38311a/b/g PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original
    2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l PDF

    HWS410

    Abstract: qfn12 HWS383 QFN12L
    Contextual Info: HWS410 GaAs DC-6 GHz DPDT Switch September 2006 V3 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb)


    Original
    hws410qfn12lhws38311a/b/g+1qfn12 PDF