HFP50N06
Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A108 50A60V
Contextual Info: BVDSS = 60 V RDS on = 22 mΩ HFP50N06 ID = 50 A 60V N-Channel MOSFET TO-220 FEATURES 1 2 3 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.)
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hfp50n06
Abstract: HFP50n06 equivalent hfp50n0 BVDSS 50A60V hfp50n
Contextual Info: BVDSS = 60 V RDS on = 18 mΩ HFP50N06 ID = 50 A 60V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics
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hfp50n06o-22054typhfp50n06 equivalent+4hfp50n0bvdss50a60vhfp50n
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hfp50n06
Abstract: HFP50n06 equivalent c25 mosfet N-Channel MOSFET 20V n-Channel Power MOSFET hfp50n0 "N-Channel MOSFET" mosfet low vgs mosfet nA idss Huashan
Contextual Info: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 █ APPLICATIONSL TO-220 Low Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………-55~175℃ Tj ——Operating Junction Temperature …………………………150℃
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hfp50n06o-220width300sdutyhfp50n06 equivalent+7c25 mosfetn-channel mosfet20v n-channel power mosfethfp50n0mosfet low vgsmosfet na idsshuashan
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