HD74LS08 Search Results

HD74LS08P

Abstract: data sheet HD74LS08P HD74LS08P application notes HD74LS08 HD74LS08FPEL HD74LS08RPEL PRDP0014AB-B PRSP0014DE-A PRSP0014DF-B making 865
Contextual Info: HD74LS08 Quadruple 2-Input Positive AND Gates REJ03D0394–0200 Rev.2.00 Feb.18.2005 Features • Ordering Information Part Name Package Type Package Code Previous Code Package Abbreviation Taping Abbreviation (Quantity) HD74LS08P DILP-14 pin PRDP0014AB-B

HAF2001

Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Contextual Info: HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0600 Previous: ADE-208-353D Rev.6.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

HD74LS08

Abstract: REJ03G1139-0300 HAF2012 PRSS0004AE-A HAF2012-90
Contextual Info: HAF2012 L , HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0300 (Previous: ADE-208-677A) Rev.3.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

Hitachi DSA002749

Contextual Info: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over

HD74LS08

Abstract: HAF2001 Hitachi DSA0073
Contextual Info: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down

HAF2012-90

Abstract: HAF2012 HD74LS08 PRSS0004AE-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HAF2001

Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

HAF2001

Abstract: HD74LS08 DSA003641
Contextual Info: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353D Z 5th. Edition Mar. 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit

HAF2002

Abstract: HAF2002-90 HD74LS08 PRSS0003AD-A
Contextual Info: HAF2002 Silicon N Channel MOS FET Series Power Switching REJ03G1135-0300 Previous: ADE-208-503A Rev.3.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

HAF2001

Abstract: HD74LS08
Contextual Info: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353 D Z 5th. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

74ls74apc

Abstract: HD74ls04p 74LVC1G04ady8 semiconductor AZ431BZ-AE1 HCF4060BE HEF4093BP datasheet free download ne5334 hd74hc132p dm74ls47n
Contextual Info: Standard Linear and Logic Products Cross-Reference Introduction Notice This Standard Linear and Logic Products CrossReference will assist in finding a device made by Texas Instruments that is a drop-in or similar replacement to many of our competitors’ standard linear and logic products.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HAF2001

Abstract: HD74LS08
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HAF2012-90

Abstract: HAF2012 HD74LS08 PRSS0004AE-A
Contextual Info: HAF2012 L , HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Hitachi DSA002759

Contextual Info: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down

HD74LS08

Abstract: HAF2002 HAF2002-90 PRSS0003AD-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid