GT40T321 Search Results

Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

40t321

Abstract: GT40T321 gt40t
Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

40t321

Abstract: GT40T321 ic401
Contextual Info: GT40T321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT40T321 ○ 民生用 ○ 電圧共振インバータスイッチング専用 ○ 第６世代 単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。

GT40T321

Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。