GS82032 Search Results

Contextual Info: ¡il TU4IHDLDCV GS82032Q/T 138/133/117/100/66,3.3V gs82032Q r C A li V U H H \ À 0 0 O fc P U l O l Features • • • • • • • • • • Single 3.3V +10%/-5% power supply High frequency operation: 138MHz Fast access time: 4ns Clock to Q FT mode pin for either flow-thru or pipeline operation

GS82032A

Abstract: GS82032AT-133 GS82032AT-166 GS82032AT-180 GS82032AT-4 GS82032AT-5 GS82032AT-6
Contextual Info: GS82032AT/Q-180/166/133/100 TQFP, QFP Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation • 3.3 V +10%/–5% core power supply

Contextual Info: GS82032AT-180/166/150/133/100/66/4/5/6 Functional Description tin Applications The GS82032A is a 2,097,152-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device

180I

Abstract: GS82032A GS82032AT-133 GS82032AT-166 GS82032AT-180 GS82032AT-200 GS82032AT-4 GS82032AT-5 QFP PACKAGE thermal resistance gs82032
Contextual Info: GS82032AT/Q-200/180/166/133/100 TQFP, QFP Commercial Temp Industrial Temp 200 MHz–100 MHz 7.5 ns–12 ns 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2M Synchronous Burst SRAM Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipelined

Contextual Info: GS82032T/Q-150/138/133/117/100/66 64K x 32 2M Synchronous Burst SRAM TQFP, QFP Commercial Temp Industrial Temp Features Flow Through / Pipeline Reads • FT pin for user configurable flow through or pipelined operation. • Single Cycle Deselect SCD Operation.

GS82032AT-5

Abstract: GS82032AT-66 GS82032A GS82032AT-100 GS82032AT-133 GS82032AT-150 GS82032AT-166 GS82032AT-180 GS82032AT-4
Contextual Info: GS82032AT-180/166/150/133/100/66/4/5/6 180 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2Mb Synchronous Burst SRAM TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation

GS82032

Abstract: GS820322T-138 GS82032T-133 GS82032T-150 GS82032T-4 GS82032T-5 GS82032T-6
Contextual Info: Preliminary GS82032T/Q-150/138/133/117/100/66 TQFP, QFP Commercial Temp Industrial Temp 64K x 32 2M Synchronous Burst SRAM Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation

tq33

Contextual Info: High Output Drive cti u m o i o G v GS820H32Q/T 138/133/117/100/66,3.3V GS820H32Q/T Features • 2x Output drive of GS82032 • • • • • • • • • • 80-138MHz P/L 66MHz (FTi 64K x 32 Burst Single 3.3V + \ 0 %/- 5 % power supply High frequency operation: 138MHz

Contextual Info: GS82032AT-166/150/133/100/66/4/5/6 166 MHz–66 MHz 8.5 ns–18 ns 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2M Synchronous Burst SRAM TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation

Contextual Info: GS82032AT/Q-200/180/166/133/100 TQFP, QFP Commercial Temp Industrial Temp 150 MHz–66 MHz 7.5 ns–12 ns 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2M Synchronous Burst SRAM Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipelined operation

Contextual Info: GS82032AT-180/166/150/133/100/66/4/5/6 180 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2Mb Synchronous Burst SRAM TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation

GS82032A

Abstract: GS82032AT-100 GS82032AT-133 GS82032AT-150 GS82032AT-166 GS82032AT-180 GS82032AT-4 GS82032AT-5 GS82032AT-66 GS82032AGT-4
Contextual Info: GS82032AT-180/166/150/133/100/66/4/5/6 180 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 64K x 32 2Mb Synchronous Burst SRAM TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation

VCC3 1156 01

Abstract: VCC3 1156
Contextual Info: » I T T I O L O » _ S S S S S S GSM31P512KB-I66 256KB/512KB Modules s— Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single 5V 8Kx8 SRAM for the tag. The GSM14P512K-I66, a

GS8160Z18BT-150

Abstract: TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25
Contextual Info: TOSHIBA For Toshiba: Add "I" after package designator for Industrial Temp. For example: the TC55VD818FF-133 becomes the TC55VD818FFI-133 for industrial temp. For GSI: Add "I" at the end of part number for Industrial Temp. TC55V16176FF-150 TC55V16176FF-167

1H08S

Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Contextual Info: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -

GS82032A

Abstract: GS84018A MPC7410 MPC7450 MPC750 MPC755 RM5271 RM7065 intel L2 cache burst length 832KX8
Contextual Info: High Speed Memory Technology for Cache Applications Introduction Many processors today use a high speed cache to accelerate memory access. A level 2 or level 3 cache connected on a backside bus can take advantage of high SRAM bandwidth in providing low latency data access. Today’s performance-oriented applications require

16KX8

Abstract: TAG 106 D 64KX32 GS81132Q GSM31P256KB-I66 GSM31P512KB-I66 SRAM 16k*8
Contextual Info: GSM31P256KB-I66 GSM31P512KB-I66 GSI TECHNOLOGY GSM31P256KB-I66 GSM31P512KB-I66 256KB / 512KB Modules COASt 3.1 Specification Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

ADM809RAR

Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
Contextual Info: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

TS 100-12

Abstract: GS82032A GS820E32A GS820E32AT-133 GS820E32AT-166 GS820E32AT-166I GS820E32AT-180 GS820E32AT-180I GS820E32AT-4 GS820E32AT-5
Contextual Info: GS820E32AT-180/166/133/4/5 TQFP Commercial Temp Industrial Temp 64K x 32 2Mb Synchronous Burst SRAM Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation • 3.3 V +10%/–5% core power supply

Contextual Info: GS820E32AT-166/133/4/5 TQFP Commercial Temp Industrial Temp 64K x 32 2M Synchronous Burst SRAM Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation • 3.3 V +10%/–5% core power supply • 2.5 V or 3.3 V I/O supply

Contextual Info: GS820E32AT-180/166/133/4/5 TQFP Commercial Temp Industrial Temp 64K x 32 2Mb Synchronous Burst SRAM Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation • 3.3 V +10%/–5% core power supply