GG015 Search Results

M3135

Abstract: Unicorn Microelectronics lcd UM3135 UM313S lcd 162 abc lcd solar calculator 8 digit 8 digit lcd calculator display b6730 H3885 Unicorn Microelectronics
Contextual Info: UNICORN MICR O EL EC TR ONI CS 5ME D • T27fl7flfi GG015Û4 1 ■ ¡ 3 s § V ^ U M = ^ = a 3 1 3 5 8 -Digit Calculator Features ■ Number of digits — 8 digits rough estimate calculation possible . ■ Calculations — Standard four functions (+, - , x,-f).

T157WG

Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
Contextual Info: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and

MOSFET Modules

Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
Contextual Info: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS

Contextual Info: M 13E D evice DS3/DS1 MUX/DEMUX, Extended Features TXC-03303 DATA SHEET Preliminary .— = • Multiplexes/demultiplexes 28 DS1 signals into a DS3 signal. • M13 or C-bit parity mode operation • FEBE, C, or P-bit parity error insertion capability

Contextual Info: LOGIC DEVICES INC 5 aE D • SSbS^QS 0001211 4 ■ _ T - 9 3 -07 LMU557/558 8 x 8-bit Parallel Multiplier ! DESCRIPTION FEATURES The LMU557 and LMU558 are 8-bit parallel multipliers with high speed and low power operation. They are

Contextual Info: AP E X mCROTECHNOLOGY P i=V“ . CORP b?E J> Qfl7flb3b 0001520 T3T H A U T ._ >u PAI2 • PA12A A P E X M ICROTECH NOLOG Y CORPORATION • APPLICATIONS HOTLINE 8 0 0 5 46-A P EX 80 0-54 6-27 3 9 FEATURES • • • • • • LOW THERMAL RESISTANCE — 1.4 C/W

Contextual Info: P/WC-S/'erra, Inc. ERRATA PM5346 SÆINI-LITE SATURNUSERNETWORKINTERFACE ISSUE 8 PM5346 S/UNI-155-LITE DATA SHEET ERRATA Issue 8: May 30,1996 PMC-Sierra, Inc. Suite 105 - 8555 Baxter Place Bumaby, B.C. Canada V5A 4V7 Tel: 604.415.6000 • TD04ni 00 015 11 l i a

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI I HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |im Process (Leff= 0.6 |im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C)

NEL230153

Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB

Contextual Info: T 501 S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values Periodische Vorwärts- und repetitive peak forward off-state R ückw ärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung and reverse voltages

EQA03-23

Abstract: EQA03-11 erd07 ERA18 EQA03-05 EQA03-06 EQA03-07 EQA03-08 EQA03-09 EQA03-11AB
Contextual Info: COLLMER SEMICOND UC TO R INC 34E D • 22307^2 QG QIS MT 2 M C O L Zener diodes 4 0 0 mW, 5 to 35V EQA03-D M axim um ratings Max. power dissipation at 25°C 400mW Continuous allowable junction temperature -65 to +175° C Storage temperature -65 to +175°C

230Z

Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Contextual Info: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB