2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n
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MG30G1BL2
Abstract: 40mR
Contextual Info: Sb T O S H I B A -CDISCRETE/OPTOl 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S O 5e>C 08207 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE)_ D0DÖ207 r- Ü G30G1BL2 H G I H P O W E R SI-ITCHING A P P L I C A T I O N S . Unit in mm FEATURES:
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mg30g1bl240mr |
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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MG30G1BL4
Abstract: mg30g1 2-33F1A MG30 mg30g
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR T O S H IB A TECHNICAL G30G1 B L 4 SILICON NPN TRIPLE DIFFUSED TYPE DATA M G 30Ü 10L4 HIGH POWER SWITCHING APPLICATIONS. • • • • The Collector is Isolatedfrom Case. High DC Current Gain : hjvE = 100 (Mixi.) (Iq = 30A)
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2-33f1avcc-300vmg30g130g1bl4+3mg30g1bl4mg30mg30g
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