FTD2013 Search Results

Contextual Info: FTD2013 N- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features •Low ON-state resistance. •2.5V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation

D2013

Abstract: FTD2013
Contextual Info: Ordering number:ENN6080A N-Channel Silicon MOSFET FTD2013 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2013] 3.0 0.65

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

ECH8301

Abstract: FTD2017 FSS237 SANYO Replacement list ECH8401 ECH8631 ECH8652 ECH8607 FSS131 FSS138
Contextual Info: Ordering number : E I 0 0 7 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.

2SK2437

Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Contextual Info: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process