FSS234 Search Results

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

S234

Contextual Info: FSS234 N- Channel MOS Silicon FET DC-DC Converter Use TENTATIVE Features and Applications • Very Low ON-state resistance. • 4V drive. • High Speed Switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS

Contextual Info: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­

1E14

Abstract: 2E12 FSS234R4 JANSR2N7401 relay 12v 300 ohm
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 File Number 4571 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSS234

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V
Contextual Info: JANSR2N7401 H A R R IS S E M I C O N D U C T O R Formerly FSS234R4 August 1998 File Number 4571 Features 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 50V , rp5^oN = 0 .6 0 0 £ i T h e D iscrete Products O peratio n of H arris S em ico n du cto r

Contextual Info: Ordering number : ENN6865 N-Channel Silicon MOSFET FSS234 !!ili DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • 4.0V drive. 2116 • Ultrahigh-speed switching. [F S S 23 4] R R H R □' tr ö' ö' 1 4 .0.2 5.0

sd 7401

Abstract: T0257
Contextual Info: JA N SR 2N 7401 É S 1 H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 5 0 V , rQg ONi = 0.600J2 has d evelo p ed a s e ries of R adiation H a rd e n e d M O S F E T s for com m ercial

TA-2067

Abstract: TA2067 s234 mosfet s234 FSS234
Contextual Info: Ordering number : ENN6865 FSS234 N-Channel Silicon MOSFET FSS234 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. 4.0V drive. Ultrahigh-speed switching. unit : mm 2116 [FSS234] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 1.27

Contextual Info: S hW S!» FSS234D, FSS234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Package • 6A, 250V, rDS ON = 0.600Q • Total Dose • Single Event TO-257AA - Meets Pre-Rad Specifications to 100K RAD (Si) - Safe Operating Area Curve for Single Event Effects

Rad hard MOSFETS in Harris

Abstract: MIL-S-19500 1E14 2E12 FSS234D FSS234R fss234
Contextual Info: S E M I C O N D U C T O R FSS234D, FSS234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 6A, 250V, rDS ON = 0.600Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: FSS234D, FSS234R Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 6A, 250V, ros ON = 0-600£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7401 f ü H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET File Number 4571 Features • 6A, 250V, ro g o i\| = 0.600Q T he D iscrete P roducts O peration of H arris S e m icon ducto r

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: h a r S E M I C O N D U C T O R FSS234D, FSS234R " M J m a m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 6A, 250V, Tqs^on = 0.600£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD Si)

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

MOSFETS

Abstract: Power MOSFETs
Contextual Info: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

3203 MOSFET

Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
Contextual Info: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .

NEC U574

Abstract: u574 M7-CSP32 C540 DIODE m7csp32 IC JRC 4029 M9-CSP64 d42b diode 2n3904 sot 23 SDRAM SODIMM CA0062
Contextual Info: 4 5 4 PCI RESET NC7S14 SC-70 5P 2 T12 RESUME RESET C632 U50 1 PRSTMSK0 2 4 1 19 1 3VDDS 5 4 3 3 PCIRST00 19,31,32,33,34,35,36,46 7 3 2 4 3 C 0.1uF 16V 80-20% 0402 Y5V U48A 1 NOT RESET AT SUSPEND 74LVX32MTCX FAIRCHILD

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480