FSS13 Search Results

Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

transistors ai 585

Contextual Info: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: j Ordering number : ENN7019 P-Channel Silicon MOSFET FSS139 IS A ß ro i Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. u n it: mm 2116 [FSS139] MM □ □ 1 □ 1 : Source 2 : Source

MOSFET MARK H1

Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines

schottky diode 100A

Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
Contextual Info: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32

Contextual Info: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event

4431 mosfet

Contextual Info: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

fss130

Contextual Info: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects

2E12

Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
Contextual Info: FSS13A0D, FSS13A0R TM Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

marking S132

Abstract: FSS132 S132 TA2720
Contextual Info: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

FSS138

Contextual Info: Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS138] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

2E12

Abstract: FSS130R4 JANSR2N7399 T0-257AA
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSS130D, FSS130R 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 11 A, 100V, rDS 0N = 0.21 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

FSS138

Abstract: IT00414
Contextual Info: Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS138] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

Rad Hard in Fairchild for MOSFET

Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: Ordering number : ENN6919 P-Channel Silicon MOSFET FSS133 ISAÈÊYO Load Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. . 2.5V drive. unit : mm 2116 Specifications Absolute Maximum Ratings at Ta=25°C

IT02300

Abstract: TA-2723 FSS139 S139 ENN7019
Contextual Info: Ordering number : ENN7019 FSS139 P-Channel Silicon MOSFET FSS139 Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS139] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications

2E12

Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris
Contextual Info: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: j Ordering number : ENN6786 j P-Channel Silicon MOSFET FSS131 Load Switching Applications Features Package Dimensions unit : mm 2116 • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [FSS131] 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain

Contextual Info: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

marking S139

Abstract: IT02300 FSS139 S139
Contextual Info: Ordering number : ENN7019 FSS139 SANYO Semiconductors DATA SHEET FSS139 P-Channel Silicon MOSFET Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS139] 5 4 0.2 1.8max