1200MM2X0 Search Results
1200MM2X0 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ECH8671 Ordering number : ENA1456A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8671 General-Purpose Switching Device Applications Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications |
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ECH8671 ENA1456A 1200mm2Ã A1456-7/7 | |
TND017MP
Abstract: TND017SW tA318
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ENN6481A TND017MP, TND017SW TND017MP] TND017SW] TND017SW TND017MP tA318 | |
Contextual Info: Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Single ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications |
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ENA1436A ECH8674 1200mm2Ã A1436-7/7 | |
Contextual Info: Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in |
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ENA2185B ECH8690 A2185-8/8 | |
Contextual Info: Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6 http://onsemi.com Features • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage |
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ENA0963B MCH6321 1200mm2Ã A0963-5/5 | |
A1667
Abstract: ENA1667A mosfet marking ke
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ENA1667A EMH1405 PW10s, 1200mm2 A1667-7/7 A1667 ENA1667A mosfet marking ke | |
a0923Contextual Info: CPH6337 Ordering number : ENA0923A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter |
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ENA0923A CPH6337 PW10s, 1200mm2 A0923-7/7 a0923 | |
A1776Contextual Info: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA1776 MCH6437 PW10s, 1200mm2 022A-009 A1776-4/4 A1776 | |
FSS212Contextual Info: Ordering number:ENN5933 N-Channel Silicon MOSFET FSS212 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS212] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain |
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ENN5933 FSS212 FSS212] FSS212 | |
marking s104
Abstract: s104 diode S104 FSS104
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ENN5991A FSS104 FSS104] marking s104 s104 diode S104 FSS104 | |
Contextual Info: Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET http://onsemi.com –20V, –6.5A, 26mΩ, Single EMH8 Features • • • ON-resistance RDS on 1 : 20mΩ(typ.) 1.8V drive Protection diode in • • Input Capacitance Ciss=1100pF(typ.) Halogen free compliance |
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ENA1715A EMH1307 1100pF PW10s, 1200mm2 A1715-7/7 | |
VEC2818Contextual Info: VEC2818 注文コード No. N A 0 5 7 7 三洋半導体データシート N VEC2818 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。 |
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VEC2818 1200mm2 11707PE TC-00000470 A0577-1/5 IT08571 IT08572 IT03090 VEC2818 | |
A1358
Abstract: ECH8660 pch 100v ech8 A1358-2
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ECH8660 1200mm2 --10V IT14194 --30A PW10s 1200mm2 IT14196 A1358 ECH8660 pch 100v ech8 A1358-2 | |
EMH1303
Abstract: A06611 A0661
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EMH1303 1200mm2 IT12944 --28A PW10s 1200mm2 IT13034 IT12946 A0661-4/4 EMH1303 A06611 A0661 | |
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Contextual Info: Ordering number : ENA1456A ECH8671 P-Channel Power MOSFET http://onsemi.com –12V, –3.5A, 77mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA1456A ECH8671 PW10s, 1200mm2 A1456-7/7 | |
Contextual Info: Ordering number : ENA0661A EMH1303 P-Channel Power MOSFET http://onsemi.com –12V, –7A, 23mΩ, Single EMH8 Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage |
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ENA0661A EMH1303 PW10s, 1200mm2 A0661-7/7 | |
FSS238
Abstract: S238 PG2520
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ENN6401 FSS238 FSS238] FSS238 S238 PG2520 | |
Contextual Info: Ordering number : ENA1710B ECH8657 N-Channel Power MOSFET http://onsemi.com 35V, 4.5A, 59mΩ, Dual ECH8 Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage |
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ENA1710B ECH8657 PW10s, 1200mm2 A1710-7/7 | |
Contextual Info: Ordering number : ENA1826A CPH6443 N-Channel Power MOSFET http://onsemi.com 35V, 6A, 37mΩ, Single CPH6 Features • • • • ON-resistance RDS on 1=28mΩ(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA1826A CPH6443 PW10s, 1200mm2 A1826-7/7 | |
Contextual Info: Ordering number : ENA1776A MCH6437 N-Channel Power MOSFET http://onsemi.com 20V, 7A, 24mΩ, Single MCPH6 Features • • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol |
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ENA1776A MCH6437 PW10s, 1200mm2 A1776-7/7 | |
2SJ468
Abstract: ITR00563 ITR00564
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2SJ468 1200mm2 1200mm2 ITR00563 ITR00564 2SJ468 ITR00563 ITR00564 | |
A1776
Abstract: transistor A1776 datasheets MCH6437 SC82
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MCH6437 ENA1776 PW10s, 1200mm2 A1776-4/4 A1776 transistor A1776 datasheets MCH6437 SC82 | |
CPH6413Contextual Info: 注文コード No. N 7 3 1 9 CPH6413 三洋半導体データシート N CPH6413 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 |
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CPH6413 1200mm2 1200mm2 IT03623 IT03624 CPH6413 | |
W356
Abstract: FW356 IT06079 V145
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FW356 1200mm2 IT06086 --14A --30V IT06089 IT06090 W356 FW356 IT06079 V145 |