FRL130 Search Results

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: H a r r is S E M I C O N D U C T O R 2N7272D, 2N7272R 21^7272H REGISTRATION PENDING Currently Available as FRL130 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 8A, 100V, RDS(on) = 0.1300 TO-205AF

pj 939 diode

Abstract: Rad hard MOSFETS in Harris
Contextual Info: FRL130D, FRL130R, FRL130H Semiconductor 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180£i TO-205AF • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

Contextual Info: 3 HÄ« » JANSR2N7272 Formerly FRL130R4 Features Description • 8A, 100V, Tqs o N) = 0.18011 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F

Contextual Info: JSJ H A R R IS UU S E M I C O N D U C T O R FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

Contextual Info: JANSR2N7272 Œ Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 8A, 100V, ros ON = 0.180S2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

2E12

Abstract: FRL130D FRL130H FRL130R
Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2N7272R

Abstract: 2E12 2N7272D 2N7272H FRL130
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 8A, 100V, RDS(on) = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

180I2

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 S Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 8A, 100V, ro s O N = 0.180i2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: 4302271 D045b7b fifl4 H H A S ££ H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H) 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 8A. 100V, RDS(on) • 0.180«

1334 diode

Abstract: 1E14 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 S E M I C O N D U C T O R Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs June 1997 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

2E12

Abstract: FRL130D FRL130H FRL130R Rad Hard in Fairchild for MOSFET FRL130
Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog