FQD3P50 Search Results

FQD3P50TM_F085

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

400v p-channel mosfet

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 October 2008 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQD3P50

Abstract: FQU3P50
Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

P-Channel mosfet 400v

Abstract: FQD3P50 FQU3P50
Contextual Info: FQD3P50 / FQU3P50 January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

CMZ59448

Abstract: LTBSZ ltbnd diode G21 2A 100v LTC6101HV LTC2433-1 LTC6101 DC 5V to DC 100V CIRCUIT DIAGRAM 6101fa
Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 U FEATURES DESCRIPTIO • The LTC 6101/LTC6101HV are versatile, high voltage, high side current sense amplifiers. Design flexibility is provided by the excellent device characteristics; 300µV Max offset

LTC6106

Abstract: BZX88 10kROUT led 3mm LT6100 mosfet motor dc 48v thermal fuse 115 250V 2A LTC2433-1 LTC6102 LTC6102IMS8
Contextual Info: LTC6102/LTC6102HV Precision Zero Drift Current Sense Amplifier FEATURES DESCRIPTION n The LTC 6102/LTC6102HV are versatile, high voltage, high-side current sense amplifiers. Their high supply voltage rating allows their use in almost any application, while the low drift and offset ensure accuracy across a

theory of regulated 9v power supply using LM317

Abstract: Luxeon K2 driver schematic lm317 SANYO Replacement list 4.7uF 6.3v X7R 0603 LT080 LT317 troubleshooting and repair lcd monitors 16bit i2c led dimming 150mA LT4356 0805 2.2uf x7r
Contextual Info: LINEAR TECHNOLOGY OCTOBER 2007 IN THIS ISSUE… COVER ARTICLE Low Dropout Regulator Can Be Directly Paralleled to Spread The Heat .1 Robert Dobkin Linear in the News… .2 DESIGN FEATURES 16-Channel LED Driver Drives up to 160

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

LTC6102

Abstract: BZX884-C51 BAT46 FQD3P50 LTC2050HV LTC2433-1 LTC3850 FQD3P50TM LTC24331 BZX88
Contextual Info: DESIGN FEATURES L Measure Microamps to Amps or Reduce Power Dissipation by 99%, by Brendan J. Whelan You Decide! Introduction Why Use High Side Sense? In many applications, the sense load is ground referred. The simplest way to measure current in these systems is

CMZ5944B

Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 DESCRIPTION FEATURES n n n n n n n n n n n Supply Range: 5V to 100V, 105V Absolute Maximum LTC6101HV 4V to 60V, 70V Absolute Maximum (LTC6101) Low Offset Voltage: 300 V Max Fast Response: 1μs Response Time (0V to 2.5V on

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Fuse m1 250C

Abstract: CMZ5944B
Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 U FEATURES DESCRIPTIO • The LTC 6101/LTC6101HV are versatile, high voltage, high side current sense amplifiers. Design flexibility is provided by the excellent device characteristics; 300µV Max offset

LTC6106

Abstract: BZX88 ltckj LTC6102
Contextual Info: LTC6102/LTC6102HV Precision Zero Drift Current Sense Amplifier FEATURES DESCRIPTION n The LTC 6102/LTC6102HV are versatile, high voltage, high-side current sense amplifiers. Their high supply voltage rating allows their use in almost any application, while the low drift and offset ensure accuracy across a

LTC6102IMS8-1

Abstract: LTC6102IMS8 LTC2433-1 LTC6102 LTC6102-1 6102F LTCVB BZX88 CMZ5931B
Contextual Info: LTC6102 LTC6102-1/LTC6102HV Precision Zero Drift Current Sense Amplifier DESCRIPTION FEATURES n n n n n n n n n n n Supply Range: 4V to 60V, 70V Maximum LTC6102 5V to 100V, 105V Maximum (LTC6102HV) ±10 V Input Offset Maximum ±50nV/°C Input Offset Drift Maximum