FQB11P06 Search Results
FQB11P06 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQB11P06 | Fairchild Semiconductor | 60 V P-Channel MOSFET | Original | 612.89KB | 9 | ||
| FQB11P06 | Fairchild Semiconductor | 60V P-Channel MOSFET | Original | 674.89KB | 9 | ||
| FQB11P06TM | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 11.4A D2PAK | Original | 8 | |||
| FQB11P06TM | Fairchild Semiconductor | 60V P-Channel QFET | Original | 665.57KB | 9 |
FQB11P06 Price and Stock
Fairchild Semiconductor Corporation FQB11P06TM11.4 A, 60 V, 0.175 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQB11P06TM | 6 |
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FQB11P06TM | 23,000 |
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onsemi FQB11P06TMTransistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQB11P06TM | 1 |
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FQB11P06 Datasheets Context Search
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FQB11P06
Abstract: FQI11P06
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FQB11P06TMContextual Info: QFET TM FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqb11p06fqi11p06fqi11p06tuo-262+1 | |
FQB11P06
Abstract: FQI11P06
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FQB11P06
Abstract: FQI11P06
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Contextual Info: FQB11P06 / FQI11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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Contextual Info: FQB11P06 / FQI11P06 May 2000 QFET TM FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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Contextual Info: QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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Contextual Info: FQB11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQB11P06
Abstract: FQI11P06
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FQB11P06
Abstract: FQI11P06
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 | |
FQPf10N60C
Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
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fdz201nfdz209nfdz2553nfdz2553nz+16 | |