FML22S Search Results

FML22S

Contextual Info: FML22S thru FML24S Pb Free Plating Product Pb FML22S thru FML24S 10.0 Ampere Dual Unipolar/Common Cathode Polarity Ultrafast Recovery Diode Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current

FML22S

Abstract: FML24S FML-22S FML-23S FML-24S
Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. FML-22S 200 FML-23S 300 IFSM (A) I F (AV) (A) Tj (°C) VF (V) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot With Heatsink max per

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FML-22R

Abstract: FML22S fml 22r FML22R
Contextual Info: FML22R thru FML24R Pb Free Plating Product Pb FML22R thru FML24R 10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current

FML-22R

Contextual Info: FML22U thru FML24U Pb Free Plating Product Pb FML22U thru FML24U 10.0 Ampere Dual Doubler Polarity Ultrafast Recovery Diodes for Amplifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

AG01Z

Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

FMXG12

Abstract: FMX4202S fmng12 FML4202S FMXA2202S sjpl-d2 FMXA-2202S FMX-4202S SJPX-F2 FMXS-4202
Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 trrq

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

FML22S

Contextual Info: FML-22S Super Fast Rectifiers VOLTAGE RANGE: 200 V CURRENT: 10 A ITO-220AB Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses The plastic m aterial carries U/L recognition 94V-0 Mechanical Data

10zrl

Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 IR(H)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FML-22S

Abstract: FML22S
Contextual Info: SANKEN ELECTRIC CO., LTD. FML-22S 1. Scope The present specifications shall apply to an FML-22S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 030123 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

AG01Z

Abstract: AL01Z EG01Z EL02Z EN01Z FML-G12S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

FMX-12S

Abstract: RBA-402L FMPG12
Contextual Info: 5-3. Ultra-Fast Recovery Rectifier Diodes Surface Mount Type Type No. VRM V IF (AV) (A) SFPL-52 0.9 -62 1.0 SPX-G32S 200 -62S* I FSM Tj (A) (Ta = 25°C) Tstg VF (V) IR (µA) max per max per element element (°C) trr1 (ns) trr2 (ns) max max 50 35 Fig. No.

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter （A） VRM I F（ AV） （V） With Type No. Heatsink FML-22S 200 FML-23S 300 IFSM （A） Tj Tstg （℃） （℃） VF （V） 50Hz Half-cycle Sinewave

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)