FDS6990A Search Results

Contextual Info: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

6990a

Abstract: FDS6990A SOIC-16
Contextual Info: June 1999 FDS6990A Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Contextual Info: FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

FDS6990A

Abstract: SOIC-16
Contextual Info: October 2002 FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

FDS6990A

Contextual Info: FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

tic 2260

Abstract: CBVK741B019 F63TNR FDS6990A FDS9953A L86Z
Contextual Info: FAIRCHILD MICDNDUCTDR June 1999 tm FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET Features General Description T hese N-Channel Logic Level MOSFETs are produced using Fairchild S em iconductor's advanced PowerTrench process that has been especially tailored to minim ize the on-state

F011

Abstract: F63TNR F852 FDS6990A L86Z SOIC-16
Contextual Info: June 1999 FDS6990A Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: F A IR C H IL D SEM IC ONDUCTO R June 1999 tm FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET G en eral D escription Featu res T hese N-Channel Logic Level MOSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been

Contextual Info: June 1999 FDS6990A Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low

FDS6990A

Abstract: FDS6990AS
Contextual Info: March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low

FDS6990A

Abstract: FDS6990AS
Contextual Info: May 2008 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low

FDS6990AS

Abstract: FDS6990A A1726
Contextual Info: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

MAX8759E

Abstract: MAX8759 Gl223
Contextual Info: 19-3874; Rev 2; 3/07 Low-Cost, SMBus, CCFL Backlight Controller The MAX8759 integrated cold-cathode fluorescent lamp CCFL inverter controller is designed to drive CCFLs using a full-bridge resonant inverter. The resonant operation ensures reliable striking and provides near-sinusoidal

MAX8759A

Abstract: ccfl bit inverter ui9.8
Contextual Info: 19-1329; Rev 0; 11/07 Low-Cost, SMBus, CCFL Backlight Controller The MAX8759A integrated cold-cathode fluorescent lamp CCFL inverter controller is designed to drive CCFLs using a full-bridge resonant inverter. The resonant operation ensures reliable striking and provides near-sinusoidal

OSC008

Abstract: usb to rj45 extenders AD1871 SW6 FLASH Enable Switch A10 sot23-5 ADSP-BF537 modular plug Tyco RJ45 RJ11 4pin A46 sot CON033
Contextual Info: ADSP-BF537 EZ-KIT Lite Evaluation System Manual Revision 2.0, June 2006 Part Number 82-000865-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2006 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent

d5024

Abstract: B1DHDC000028 1R154 MA2J72900L LE80536 R1112N331B-TR-FA K1KA02BA0014 NC131 Q13MC3061000414 B1CFMC000008
Contextual Info: CF-Y4 Schematic Diagram Main 1 DOTHAN HOST BUS VC15 1 VCPUCORE E7 E9 C46 10u 6.3V C41 10u 6.3V C35 10u 6.3V C30 10u 6.3V C24 10u 6.3V C20 10u 6.3V C16 10u 6.3V C12 10u 6.3V 2 C7 10u 6.3V C3 10u 6.3V E17 E19 E21 F6 F8 GND F18 F20 F22 C47 10u 6.3V C42 10u 6.3V

39T0167

Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3

cdb 400E

Abstract: Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b
Contextual Info: A B C D E F G H J K L M N DATE 9 APOLLO-9 PLANAR VER 0.60 REL RED RED M9/KINNERETH-R BASE DEC/26/2003 7 6 5 4 3 2 1 13R1151 A TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING MCH-M(1/4) MCH-M(2/4) MCH-M(3/4) MCH-M(4/4) DDR SO DIMM CONNECTOR 0

474j capacitor

Abstract: AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 11/21/03 Q 13R1088 J45843A ROME-1 PLANAR M9/KINNERETH-R/WO-ACC BASE VER 0.99 P PART NO. 9 DEVELOPMENT NO. Q/M /82 1 NOV/21/2003 8 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.

558B

Abstract: S558-5999-U1 F ky U10 ADP3205 PMH4 C949
Contextual Info: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E G F H J K L M N DATE 9 YUKON/KODIAK VER SE 10/20/03 PLANAR 10/20/2003 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING GMCH-M(1/5) GMCH-M(2/5) GMCH-M(3/5) GMCH-M(4/5) GMCH-M(5/5)

73D31

Abstract: D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394
Contextual Info: Intel Mobile CPU Clock Generator ICS954204 IDTCV139/CY28441 14 Y Note-6 Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 3,4,5 AGTL+ FSB Thermal Sensor LM26 DDR2 SODIMM Socket 4 6,7,8,9,10 SMBus ATMEL AT24RF08CN 48 HDD

PMH4

Abstract: ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo
Contextual Info: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E F G H J K L M N DATE 9 YUKON/KODIAK VER SE PLANAR 10/20/03 EC NO. P PART Q NO. VER.SE 9 DEVELOPMENT NO. Q/M 1 6 5 4 3 2 1 78 10/20/2003 8 7 / 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20.