EMA11 Search Results

Contextual Info: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A !External dimensions (Units : mm) !Features 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. 1.3 2.0 0.65 0.65

EMA112-CP083

Contextual Info: EMA112-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 11/27/2006 Features • • • • 0.5 – 3.0 Ghz Bandwidth 28.0dBm Typical Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain Single Bias Supply Caution! ESD sensitive device.

Contextual Info: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)

Contextual Info: EMA110-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 01/10/2007 Features • • • • 0.5 – 3.0 Ghz Bandwidth 26.5dBm Typical Output Power at 1dB Compression 11.0 dB Typical Small Signal Gain Single Bias Supply EMA 110 Caution! ESD sensitive device.

700UM

Contextual Info: EMA110 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um

EMA11

Abstract: DTA143Z FMA11A T148 UMA11N
Contextual Info: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)

DTA143Z

Abstract: EMA11 FMA11A T148 UMA11N
Contextual Info: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)

700um

Contextual Info: EMA110 0.5 – 3.0 GHz High Linearity Power MMIC FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um

Contextual Info: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)

DTA143Z

Abstract: EMA11 FMA11A T148 UMA11N
Contextual Info: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A !External dimensions (Units : mm) !Features 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. 1.3 2.0 0.65 0.65

EMA112-SOT89

Abstract: pt 35c
Contextual Info: EMA112-SOT89 PRELIMINARY DATA SHEET 0.5-3.0 GHz High Linearity Power MMIC ISSUED DATE: 02-09-04 FEATURES • • • • • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE 0.5-3.0 GHz BANDWIDTH +28.0dBm TYPICAL OUTPUT POWER 41dBm OIP3 15.0dB TYPICAL POWER GAIN

EMA110-130F

Abstract: 2.4g
Contextual Info: EMA110-130F 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 08/10/2005 FEATURES • • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

resistor

Abstract: PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2
Contextual Info: SOT5xx Cross Reference LOGIC MiniG LCX OVT Logic MiniGates ON ~ ~ ~ ~ NL17SZ00XV5T2 2 Input NAND 463B TC7SZ00AFE ~ ~ ~ ~ NL17SZ02XV5T2 2 Input NOR 463B TC7SZ02AFE ~ ~ ~ ~ NL17SZ04XV5T2 Single Inverter 463B TC7SZ04AFE ~ ~ ~ ~ NL17SZU04XV5T2 Unbuffered Inverter

Contextual Info: INVERSE MULTIPLEXING FOR ATM IDT82V2608 Version - 2 December 8, 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • • FAX: (408) 492-8674 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

Contextual Info: 44 PM PM2329 ClassiPI Network Classification Processor Datasheet ur sd ay ,0 3N ClassiPI ov em be r, 20 05 09 :0 0: PM2329 Datasheet ad ed by C on te n tT ea m of Pa r tm in er In co n Th Network Classification Processor Issue 5, November 2005 Copyright 2005 PMC-SIerra, Inc. All rights reserved

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

EMA8

Abstract: EMA11 IDT82V2608
Contextual Info: INVERSE MULTIPLEXING FOR ATM IDT82V2608 Version July 25, 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • • FAX: (408) 492-8674 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

motorola g18 gsm datasheet

Abstract: "Base Station Controller" A9 RX TX EMA8 IMA machine working circuit diagram motorola g18 gsm TS27 EMA11 IDT82V2616 rsf-11
Contextual Info: INVERSE MULTIPLEXING FOR ATM IDT82V2616 Version - 2 December 8, 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • • FAX: (408) 492-8674 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

Contextual Info: E-Series Plug-In Mixer 10 - 2000 MHz EMA-11MH V3.00 Features ● ● R-1 LO Power: +13 dBm Up to +9 dBm RF Specifications @ 25°C Frequency Range RF LO IF 10 - 2000 MHz 10 - 2000 MHz DC - 600 MHz Conversion Loss dB 20 - 1000 MHz 10 - 2000 MHz Typical 7.0

Contextual Info: Afa Æ aa n A M P c< o m p a n y E-Series Plug-In Mixer 10-2000 MHz R-1 Features • 1.0 Pow er: +13 dB m • U p to +9 d B m RF NOTE : PIN NUMBERS DO NOT APPEAR ON UNIT. FOR REFERENCE ONLY. LE T T E R S *EC" OVER PIN 2 Specifications @ 2 5 ° c Frequency Range

EMA11

Abstract: IDT82V2608
Contextual Info: INVERSE MULTIPLEXING FOR ATM IDT82V2608 Version - 4 December 4, 2006 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER

OCDS1

Contextual Info: 16 AM PM2329 ClassiPI Network Classification Processor Datasheet eb 8F Fr id ay ,1 ClassiPI ru ar y, 20 05 12 :4 1: PM2329 Datasheet oa de d by C on te n tT ea m of Pa rtm in er In co n Network Classification Processor Proprietary and Confidential Issue 4, November 2001

g3c 6 pin

Contextual Info: E-Series Plug-In Mixer 1 0 -3 0 0 0 MHz EMA-11H R-1 Features • +17 dBm LO Power • Up to +10 dBm RF T C .3'0 MAX Specifications @ 25 C Frequency Range RF, LO IF I 0 G3C ± 0 00b 0 76 ± 13 DIA. 8 PLACES 10-3 000 MHz 10-1 000 MHz ODD COLORED BEAD: P IN 4