EC4790 Search Results

Contextual Info: EC4790 W I D E B A N D PO WE R FET G a A s FI E L D E F F E C T T R A N S I S T O R FEATURES • Gain at 1dB compression point : Single cell 450 |im : 8dB at 18GHz Both cells (900 (im) : 8dB at 18GHz • Output power at 1dB compression p o in t: Single cell (450 (im) : 23dBm

DIE CHIP 51 FET

Contextual Info: EC4790 Wide Band Power FET GaAs Field Effect Transistor Description The EC4790 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz Individual via hole connection is made

AH512

Abstract: AH513 AH514 ah503 AH370 AH681 AH610 ah496 AH-512 AH374
Contextual Info: A LP H A N U ME RI CA L PRODUCT INDEX P/N ADC20010 Page P/N Page P/N Page 259 AH228 35 AH458 AFC378 55 AH229 35 AH479 17 AFC500 AH 152 43 35 35 AH480 17 29 AH230 AH232 AH 153 29 AH 154 35 35 AH155 29 29 AH233 AH234 AH235 35 AH156 29 35 AH157 29 AH236 AH237

Contextual Info: FETs INDEX LOW NOISE FETs ♦ EC1840 - 40GHz LOW NOISE FE T . 85 NEW ♦ EC2623/TC2623 - 12GHz SUPER LOW NOISE H E M T.95 NEW ♦ EC2827 - 40GHz SUPER LOW NOISE H E M T . 99

DSTC57357003

Contextual Info: TC5735 Wide Band Power FET GaAs Field Effect Transistor § High reliability Description The TC5735 is a C band Schottky barrier Field Effect Transistor with a 0.5µm Aluminium gate, source via holes and gold plated heatsink for a minimum source parasitic inductance and a better